The switching characteristics of free layer of patterned magnetic tunnel junction device

C. C. Chen, Y. R. Wang, C. Y. Kuo, J. C. Wu, Lance Horng, Teho Wu, S. Yoshimura, M. Tsunoda, Migaku Takahashi

Research output: Contribution to journalArticle

Abstract

The free layer switching properties of microstructured magnetic tunnel junctions have been investigated. The M-H loop of nonpatterned film shows ferromagnetic coupling with 10 Oe shifting associated with the interlayer roughness coupling. The MR curve of the patterned element shows stepped minor loop, less loop shifting, and larger coercive field due to shape anisotropy and stray field effects. MFM images of the element show nonuniform domain structures during reversal process.

Original languageEnglish
Pages (from-to)e285-e287
JournalJournal of Magnetism and Magnetic Materials
Volume304
Issue number1
DOIs
Publication statusPublished - 2006 Sep 1

Keywords

  • Free layer switching
  • Magnetic tunnel junctions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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  • Cite this

    Chen, C. C., Wang, Y. R., Kuo, C. Y., Wu, J. C., Horng, L., Wu, T., Yoshimura, S., Tsunoda, M., & Takahashi, M. (2006). The switching characteristics of free layer of patterned magnetic tunnel junction device. Journal of Magnetism and Magnetic Materials, 304(1), e285-e287. https://doi.org/10.1016/j.jmmm.2006.02.020