The substrate orientation dependence of GaAsSb thin layer and GaSb dots grown by molecular layer epitaxy

Takeo Ohno; Yutaka Oyama; Shota Sato

doi:10.1002/pssc.200983858

The substrate orientation dependence of GaAsSb thin layer and GaSb dots grown by molecular layer epitaxy

Takeo Ohno, Yutaka Oyama, Shota Sato

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Abstract

A GaAs/GaAsSb/GaAs structure was grown on (100), (111)A, (111)B and (110) GaAs substrates by intermittent injection of AsH₃, TEGa, and TMSb. The maximum Sb composition was GaAs_0.79Sb_0.21 on (100) GaAs. From the SIMS, PL and XRD measurements, the abruptness of the quantum well interface and lattice strain were discussed. The growth of GaSb dot was also carried out, and a 20 nm average diameter and a dot density of 7×10¹⁰ cm^-2 were achieved on (111)A.

Original language	English
Pages (from-to)	2510-2513
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	7
Issue number	10
DOIs	https://doi.org/10.1002/pssc.200983858
Publication status	Published - 2010 Oct 1

Keywords

GaAsSb
GaSb dots
Molecular layer epitaxy
Photoluminescence
SIMS
Structure

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.200983858

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abstract = "A GaAs/GaAsSb/GaAs structure was grown on (100), (111)A, (111)B and (110) GaAs substrates by intermittent injection of AsH3, TEGa, and TMSb. The maximum Sb composition was GaAs0.79Sb0.21 on (100) GaAs. From the SIMS, PL and XRD measurements, the abruptness of the quantum well interface and lattice strain were discussed. The growth of GaSb dot was also carried out, and a 20 nm average diameter and a dot density of 7×1010 cm-2 were achieved on (111)A.",

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author = "Takeo Ohno and Yutaka Oyama and Shota Sato",

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T1 - The substrate orientation dependence of GaAsSb thin layer and GaSb dots grown by molecular layer epitaxy

AU - Ohno, Takeo

AU - Oyama, Yutaka

AU - Sato, Shota

PY - 2010/10/1

Y1 - 2010/10/1

N2 - A GaAs/GaAsSb/GaAs structure was grown on (100), (111)A, (111)B and (110) GaAs substrates by intermittent injection of AsH3, TEGa, and TMSb. The maximum Sb composition was GaAs0.79Sb0.21 on (100) GaAs. From the SIMS, PL and XRD measurements, the abruptness of the quantum well interface and lattice strain were discussed. The growth of GaSb dot was also carried out, and a 20 nm average diameter and a dot density of 7×1010 cm-2 were achieved on (111)A.

AB - A GaAs/GaAsSb/GaAs structure was grown on (100), (111)A, (111)B and (110) GaAs substrates by intermittent injection of AsH3, TEGa, and TMSb. The maximum Sb composition was GaAs0.79Sb0.21 on (100) GaAs. From the SIMS, PL and XRD measurements, the abruptness of the quantum well interface and lattice strain were discussed. The growth of GaSb dot was also carried out, and a 20 nm average diameter and a dot density of 7×1010 cm-2 were achieved on (111)A.

KW - GaAsSb

KW - GaSb dots

KW - Molecular layer epitaxy

KW - Photoluminescence

KW - SIMS

KW - Structure

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DO - 10.1002/pssc.200983858

M3 - Article

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EP - 2513

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

SN - 1862-6351

IS - 10

ER -

The substrate orientation dependence of GaAsSb thin layer and GaSb dots grown by molecular layer epitaxy

Abstract

Keywords

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