A GaAs/GaAsSb/GaAs structure was grown on (100), (111)A, (111)B and (110) GaAs substrates by intermittent injection of AsH3, TEGa, and TMSb. The maximum Sb composition was GaAs0.79Sb0.21 on (100) GaAs. From the SIMS, PL and XRD measurements, the abruptness of the quantum well interface and lattice strain were discussed. The growth of GaSb dot was also carried out, and a 20 nm average diameter and a dot density of 7×1010 cm-2 were achieved on (111)A.
|Number of pages||4|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2010 Oct 1|
- GaSb dots
- Molecular layer epitaxy
ASJC Scopus subject areas
- Condensed Matter Physics