The substrate orientation dependence of GaAsSb thin layer and GaSb dots grown by molecular layer epitaxy

Takeo Ohno, Yutaka Oyama, Shota Sato

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1 Citation (Scopus)

Abstract

A GaAs/GaAsSb/GaAs structure was grown on (100), (111)A, (111)B and (110) GaAs substrates by intermittent injection of AsH3, TEGa, and TMSb. The maximum Sb composition was GaAs0.79Sb0.21 on (100) GaAs. From the SIMS, PL and XRD measurements, the abruptness of the quantum well interface and lattice strain were discussed. The growth of GaSb dot was also carried out, and a 20 nm average diameter and a dot density of 7×1010 cm-2 were achieved on (111)A.

Original languageEnglish
Pages (from-to)2510-2513
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume7
Issue number10
DOIs
Publication statusPublished - 2010 Oct 1

Keywords

  • GaAsSb
  • GaSb dots
  • Molecular layer epitaxy
  • Photoluminescence
  • SIMS
  • Structure

ASJC Scopus subject areas

  • Condensed Matter Physics

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