The substrate orientation dependence of be doping in molecular layer epitaxy of GaAs

Takeo Ohno, Yutaka Oyama, Jun Ichi Nishizawa

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

Be-doped GaAs epitaxial layers were grown on (100), (111)A, (111)B and (110) GaAs substrates by MLE. In the growth on (111)A GaAs, the incorporation of Be was enhanced significantly when Be(MeCp)2 was introduced after exposure to AsH3 (AA mode) at 277 °C, and consequently Be concentrations up to 8×1019 cm-3 were achieved. It was shown that the concentration of Be on (111)B GaAs substrate was high when exposed to Be(MeCp)2 after exposure to TEG. The relationship between the surface stoichiometry and Be incorporation is discussed. (Table Presented) The substrate orientation dependence of Be concentration.

Original languageEnglish
Pages (from-to)2763-2765
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number9
DOIs
Publication statusPublished - 2008 Dec 1
Event34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan
Duration: 2007 Oct 152007 Oct 18

ASJC Scopus subject areas

  • Condensed Matter Physics

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