Be-doped GaAs epitaxial layers were grown on (100), (111)A, (111)B and (110) GaAs substrates by MLE. In the growth on (111)A GaAs, the incorporation of Be was enhanced significantly when Be(MeCp)2 was introduced after exposure to AsH3 (AA mode) at 277 °C, and consequently Be concentrations up to 8×1019 cm-3 were achieved. It was shown that the concentration of Be on (111)B GaAs substrate was high when exposed to Be(MeCp)2 after exposure to TEG. The relationship between the surface stoichiometry and Be incorporation is discussed. (Table Presented) The substrate orientation dependence of Be concentration.
|Number of pages||3|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2008 Dec 1|
|Event||34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan|
Duration: 2007 Oct 15 → 2007 Oct 18
ASJC Scopus subject areas
- Condensed Matter Physics