It is reported for the first time on reactively-sputtered a-Ge:H(a-Ge)/a-GeNx multilayer structures that the structural stability changes systematically depending on the layer thickness and a nature of the layer-layer interface. This effect has been interpreted qualitatively on the basis of the thermodynamical discussion on the free-energy change in two-dimensional crystallization process of a thin-film multilayer structure.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry