The solid state reaction of deposited Fe (four monolayers, ML) with vicinal Si(111) substrate induced by subsequent thermal treatment has been studied using scanning tunnelling microscopy. At the lower range of annealing temperatures up to 400°C the bunched steps of bare substrate are reproduced by the surface of the covering iron silicide layer. At 400°C the onset of three-dimensional growth of iron silicide islands is observed. In comparison to the samples covered with smaller amounts of Fe it appears at a lower annealing temperature. Above 500°C the bunched steps split into lower ones but more densely distributed due to proceeding reactions between Fe-rich iron silicide and Si substrate. As a consequence, at 700°C the well-developed three-dimensional nanocrystallites of iron silicide are randomly distributed on the Si surface. This observation is in contrast to the formation of a regular array of iron silicide crystallites upon deposition of 2 ML of Fe.
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering