The selective area deposition of diamond films

Hongwu Liu; Chunxiao Gao; Guangtian Zou; Xun Li; Chengxin Wang; Chao Wen

doi:10.1143/jjap.39.1323

The selective area deposition of diamond films

Hongwu Liu, Chunxiao Gao, Guangtian Zou, Xun Li, Chengxin Wang, Chao Wen

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

By selectively seeding, polycrystalline diamond films have been patterned on mirror-polished Si substrate using hot-filament chemical vapor deposition. Results show high selectivity and high quality in patterned diamond films deposited at 0.05% CH₄/H₂ concentration and at the growth rate of 2.6 μm/h. The selective area deposition (SAD) method is easy to be applied to a large and a different substrate.

Original language	English
Pages (from-to)	1323-1324
Number of pages	2
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	39
Issue number	3 A
DOIs	https://doi.org/10.1143/jjap.39.1323
Publication status	Published - 2000
Externally published	Yes

Keywords

High selectivity
Hot-filament chemical vapor deposition
Polycrystalline diamond films
Selective area deposition
Selectively seeding

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.39.1323

Cite this

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title = "The selective area deposition of diamond films",

abstract = "By selectively seeding, polycrystalline diamond films have been patterned on mirror-polished Si substrate using hot-filament chemical vapor deposition. Results show high selectivity and high quality in patterned diamond films deposited at 0.05% CH4/H2 concentration and at the growth rate of 2.6 μm/h. The selective area deposition (SAD) method is easy to be applied to a large and a different substrate.",

keywords = "High selectivity, Hot-filament chemical vapor deposition, Polycrystalline diamond films, Selective area deposition, Selectively seeding",

author = "Hongwu Liu and Chunxiao Gao and Guangtian Zou and Xun Li and Chengxin Wang and Chao Wen",

year = "2000",

doi = "10.1143/jjap.39.1323",

language = "English",

volume = "39",

pages = "1323--1324",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "3 A",

}

TY - JOUR

T1 - The selective area deposition of diamond films

AU - Liu, Hongwu

AU - Gao, Chunxiao

AU - Zou, Guangtian

AU - Li, Xun

AU - Wang, Chengxin

AU - Wen, Chao

PY - 2000

Y1 - 2000

N2 - By selectively seeding, polycrystalline diamond films have been patterned on mirror-polished Si substrate using hot-filament chemical vapor deposition. Results show high selectivity and high quality in patterned diamond films deposited at 0.05% CH4/H2 concentration and at the growth rate of 2.6 μm/h. The selective area deposition (SAD) method is easy to be applied to a large and a different substrate.

AB - By selectively seeding, polycrystalline diamond films have been patterned on mirror-polished Si substrate using hot-filament chemical vapor deposition. Results show high selectivity and high quality in patterned diamond films deposited at 0.05% CH4/H2 concentration and at the growth rate of 2.6 μm/h. The selective area deposition (SAD) method is easy to be applied to a large and a different substrate.

KW - High selectivity

KW - Hot-filament chemical vapor deposition

KW - Polycrystalline diamond films

KW - Selective area deposition

KW - Selectively seeding

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U2 - 10.1143/jjap.39.1323

DO - 10.1143/jjap.39.1323

M3 - Article

AN - SCOPUS:0033742363

VL - 39

SP - 1323

EP - 1324

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 3 A

ER -

The selective area deposition of diamond films

Abstract

Keywords

ASJC Scopus subject areas

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