Abstract
By selectively seeding, polycrystalline diamond films have been patterned on mirror-polished Si substrate using hot-filament chemical vapor deposition. Results show high selectivity and high quality in patterned diamond films deposited at 0.05% CH4/H2 concentration and at the growth rate of 2.6 μm/h. The selective area deposition (SAD) method is easy to be applied to a large and a different substrate.
Original language | English |
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Pages (from-to) | 1323-1324 |
Number of pages | 2 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 39 |
Issue number | 3 A |
DOIs | |
Publication status | Published - 2000 |
Keywords
- High selectivity
- Hot-filament chemical vapor deposition
- Polycrystalline diamond films
- Selective area deposition
- Selectively seeding
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)