The screw and circular structures of Si and GaAs epitaxial layers

J. Nishizawa, H. Tadano, Yutaka Oyama, M. Shimbo

Research output: Contribution to journalLetterpeer-review

5 Citations (Scopus)

Abstract

The observation of the as-grown crystal surface is an important way of investigating the epitaxial growth mechanism. There are a number of studies on the two-dimensional crystal growth by examining the stacking faults, growth spirals and stacking fault shadows on the as-grown silicon and germanium crystal surfaces. Although a perfect crystal is essential for the manufacture of electronic devices, crystal growth would not proceed without imperfections. Screw dislocations are regarded as constituting the growth nucleus. While the screw structure accompanied by stacking faults is frequently found, the growth nucleus generated by simple screw dislocations is seldom observed. In previous work, we have reported that perfect crystal growth can be achieved by forming defect-free pyramidal hillocks using the temperature pulsing method. Spiral growth layers, stacking faults and the stacking fault shadows on the as-grown III-V compound semiconductor surfaces grown by vapor- and liquid-phase epitaxy have been already reported. This paper presents our recent study of spiral growth layers and the circular growth nucleus.

Original languageEnglish
Pages (from-to)402-405
Number of pages4
JournalJournal of Crystal Growth
Volume55
Issue number2
DOIs
Publication statusPublished - 1981 Jan 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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