The role of the temperature on the scattering mechanisms limiting the electron mobility in metal-oxide-semiconductor field-effect-transistors fabricated on (110) silicon-oriented wafers

Philippe Gaubert, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The scattering mechanisms limiting the electron mobility in Si(110) MOSFETs have been studied in function of the temperature. They have been compared to the ones limiting the electron mobility in Si(100) MOSFETs. It appeared that the lower electron mobility encountered for the (110) orientation was coming from a stronger limitation due to the sole Coulomb and surface roughness scatterings. Indeed, the phonon-limited mobility have been found similar for both orientations. Furthermore, contrary to what it is commonly assumed, the surface roughness scattering mechanisms are not independent of the temperature. Like the Coulomb-limited mobility, the surface roughness-limited mobility will greatly vary at high temperature while they will reach a constant value when the temperature will be reduced.

Original languageEnglish
Title of host publication2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012
Pages213-216
Number of pages4
DOIs
Publication statusPublished - 2012 Dec 11
Event42nd European Solid-State Device Research Conference, ESSDERC 2012 - Bordeaux, France
Duration: 2012 Sep 172012 Sep 21

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other42nd European Solid-State Device Research Conference, ESSDERC 2012
CountryFrance
CityBordeaux
Period12/9/1712/9/21

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Fingerprint Dive into the research topics of 'The role of the temperature on the scattering mechanisms limiting the electron mobility in metal-oxide-semiconductor field-effect-transistors fabricated on (110) silicon-oriented wafers'. Together they form a unique fingerprint.

  • Cite this

    Gaubert, P., Teramoto, A., Sugawa, S., & Ohmi, T. (2012). The role of the temperature on the scattering mechanisms limiting the electron mobility in metal-oxide-semiconductor field-effect-transistors fabricated on (110) silicon-oriented wafers. In 2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012 (pp. 213-216). [6343371] (European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2012.6343371