The role of nitrogen incorporation in Hf-based high-k dielectrics: Reduction in electron charge traps

Naoto Umezawa, Kenji Shiraishi, Kazuyoshi Torii, Mauro Boero, Toyohiro Chikyow, Heiji Watanabe, Kikuo Yamabe, Takahisa Ohno, Keisaku Yamada, Yasuo Nara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

The N incorporation effect in Hf-based high-k gate dielectrics has been studied by the first-principles calculations. Interactions between N atoms and oxygen vacancies (Vos) in HfO2 are investigated. Our calculations show that N atoms favorably occupy nearest neighbor oxygen sites to Vos. As a result, electron charge traps at Vos are remarkably suppressed due to the strong repulsive Coulomb interactions between electrons and negatively charged N 3- ions. These results indicate that N incorporation improves positive bias temperature instability (PBTI) in Hf related high-k gate stacks. Moreover, our calculations have also revealed that the Vo formation energy is remarkably reduced by N incorporation.

Original languageEnglish
Title of host publicationProceedings of ESSDERC 2005
Subtitle of host publication35th European Solid-State Device Research Conference
Pages201-204
Number of pages4
DOIs
Publication statusPublished - 2005
EventESSDERC 2005: 35th European Solid-State Device Research Conference - Grenoble, France
Duration: 2005 Sep 122005 Sep 16

Publication series

NameProceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference
Volume2005

Conference

ConferenceESSDERC 2005: 35th European Solid-State Device Research Conference
CountryFrance
CityGrenoble
Period05/9/1205/9/16

ASJC Scopus subject areas

  • Engineering(all)

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