The role of diffusion barrier temperature in gallium arsenide crystals grown by the gradient freeze method

Katsushi Fujii, Fumio Orito, Hisanori Fujita, Tadashige Sato

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

A gallium arsenide crystal grown by the gradient freeze method is contaminated with silicon and oxygen, from reactions between gallium and quartz. The oxygen concentration increases with the diffusion barrier temperature. This is explained by a thermodynamic analysis of the Ga-As-Si-O system. The effect of reduced oxygen concentration on the electrical properties of GaAs crystals is also discussed.

Original languageEnglish
Pages (from-to)255-266
Number of pages12
JournalJournal of Crystal Growth
Volume121
Issue number3
DOIs
Publication statusPublished - 1992 Jul

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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