The relationships between electronic properties and microstructure of Cu(In,Ga)Se2 films prepared by sputtering from a quaternary target

Liangqi Ouyang, Ming Zhao, Daming Zhuang, Junfeng Han, Li Guo, Xiaolong Li, Mingjie Cao

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

In this work, copper indium gallium selenide (CIGS) absorbers were prepared by sputtering a CIGS quaternary target followed by a subsequent annealing process. The electronic properties and microstructure of the CIGS films with various annealing time were investigated. The various annealing time changes the content of the Cu-Se compounds. A high Cu-Se content leads to a high carrier concentration and a low mobility. An improved efficiency of the solar cell device was found to be highly correlated with the decrease of the Cu-Se content. By decreasing the Cu-Se content, a device with a highest efficiency of 8.63% was achieved in this work.

Original languageEnglish
Pages (from-to)249-251
Number of pages3
JournalMaterials Letters
Volume137
DOIs
Publication statusPublished - 2014 Dec 15

Keywords

  • CIGS
  • Cu-Se
  • Electronic property
  • Microstructure
  • Sputtering

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

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