TY - JOUR
T1 - The recovery of a magnetically dead layer on the surface of an anatase (Ti,Co)O2 thin film via an ultrathin TiO2 capping layer
AU - Krasienapibal, Thantip S.
AU - Fukumura, Tomoteru
AU - Hasegawa, Tetsuya
N1 - Funding Information:
This research was in part supported by JSPS through the NEXT Program initiated by CSTP (GR029), JSPS Grant-in-Aid for Scientific Research (26105002), and CREST, JST.
Publisher Copyright:
© 2017 by the authors.
PY - 2017/3/18
Y1 - 2017/3/18
N2 - The effect of an ultrathin TiO2 capping layer on an anatase Ti0.95Co0.05O2-δ (001) epitaxial thin film on magnetism at 300 K was investigated. Films with a capping layer showed increased magnetization mainly caused by enhanced out-of-plane magnetization. In addition, the ultrathin capping layer was useful in prolonging the magnetization lifetime by more than two years. The thickness dependence of the magnetic domain structure at room temperature indicated the preservation of magnetic domain structure even for a 13 nm thick film covered with a capping layer. Taking into account nearly unchanged electric conductivity irrespective of the capping layer’s thickness, the main role of the capping layer is to prevent surface oxidation, which reduces electron carriers on the surface.
AB - The effect of an ultrathin TiO2 capping layer on an anatase Ti0.95Co0.05O2-δ (001) epitaxial thin film on magnetism at 300 K was investigated. Films with a capping layer showed increased magnetization mainly caused by enhanced out-of-plane magnetization. In addition, the ultrathin capping layer was useful in prolonging the magnetization lifetime by more than two years. The thickness dependence of the magnetic domain structure at room temperature indicated the preservation of magnetic domain structure even for a 13 nm thick film covered with a capping layer. Taking into account nearly unchanged electric conductivity irrespective of the capping layer’s thickness, the main role of the capping layer is to prevent surface oxidation, which reduces electron carriers on the surface.
KW - Capping layer
KW - Co-doped TiO
KW - Ferromagnetic oxide semiconductor
KW - Magnetic domain structure
KW - Magnetically dead layer
KW - Room temperature ferromagnetism
KW - Surface oxidation
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U2 - 10.3390/electronics6010023
DO - 10.3390/electronics6010023
M3 - Article
AN - SCOPUS:85016419889
VL - 6
JO - Electronics (Switzerland)
JF - Electronics (Switzerland)
SN - 2079-9292
IS - 1
M1 - 23
ER -