The recovery of a magnetically dead layer on the surface of an anatase (Ti,Co)O2 thin film via an ultrathin TiO2 capping layer

Thantip S. Krasienapibal; Tomoteru Fukumura; Tetsuya Hasegawa

doi:10.3390/electronics6010023

The recovery of a magnetically dead layer on the surface of an anatase (Ti,Co)O₂ thin film via an ultrathin TiO₂ capping layer

Thantip S. Krasienapibal, Tomoteru Fukumura, Tetsuya Hasegawa

Advanced Institute for Materials Research (AIMR)

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The effect of an ultrathin TiO₂ capping layer on an anatase Ti_0.95Co_0.05O_2-δ (001) epitaxial thin film on magnetism at 300 K was investigated. Films with a capping layer showed increased magnetization mainly caused by enhanced out-of-plane magnetization. In addition, the ultrathin capping layer was useful in prolonging the magnetization lifetime by more than two years. The thickness dependence of the magnetic domain structure at room temperature indicated the preservation of magnetic domain structure even for a 13 nm thick film covered with a capping layer. Taking into account nearly unchanged electric conductivity irrespective of the capping layer’s thickness, the main role of the capping layer is to prevent surface oxidation, which reduces electron carriers on the surface.

Original language	English
Article number	23
Journal	Electronics (Switzerland)
Volume	6
Issue number	1
DOIs	https://doi.org/10.3390/electronics6010023
Publication status	Published - 2017 Mar 18

Keywords

Capping layer
Co-doped TiO
Ferromagnetic oxide semiconductor
Magnetic domain structure
Magnetically dead layer
Room temperature ferromagnetism
Surface oxidation

ASJC Scopus subject areas

Control and Systems Engineering
Signal Processing
Hardware and Architecture
Computer Networks and Communications
Electrical and Electronic Engineering

Access to Document

10.3390/electronics6010023

Cite this

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title = "The recovery of a magnetically dead layer on the surface of an anatase (Ti,Co)O2 thin film via an ultrathin TiO2 capping layer",

abstract = "The effect of an ultrathin TiO2 capping layer on an anatase Ti0.95Co0.05O2-δ (001) epitaxial thin film on magnetism at 300 K was investigated. Films with a capping layer showed increased magnetization mainly caused by enhanced out-of-plane magnetization. In addition, the ultrathin capping layer was useful in prolonging the magnetization lifetime by more than two years. The thickness dependence of the magnetic domain structure at room temperature indicated the preservation of magnetic domain structure even for a 13 nm thick film covered with a capping layer. Taking into account nearly unchanged electric conductivity irrespective of the capping layer{\textquoteright}s thickness, the main role of the capping layer is to prevent surface oxidation, which reduces electron carriers on the surface.",

keywords = "Capping layer, Co-doped TiO, Ferromagnetic oxide semiconductor, Magnetic domain structure, Magnetically dead layer, Room temperature ferromagnetism, Surface oxidation",

author = "Krasienapibal, {Thantip S.} and Tomoteru Fukumura and Tetsuya Hasegawa",

note = "Funding Information: This research was in part supported by JSPS through the NEXT Program initiated by CSTP (GR029), JSPS Grant-in-Aid for Scientific Research (26105002), and CREST, JST. Publisher Copyright: {\textcopyright} 2017 by the authors.",

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AU - Krasienapibal, Thantip S.

AU - Fukumura, Tomoteru

AU - Hasegawa, Tetsuya

N1 - Funding Information: This research was in part supported by JSPS through the NEXT Program initiated by CSTP (GR029), JSPS Grant-in-Aid for Scientific Research (26105002), and CREST, JST. Publisher Copyright: © 2017 by the authors.

PY - 2017/3/18

Y1 - 2017/3/18

N2 - The effect of an ultrathin TiO2 capping layer on an anatase Ti0.95Co0.05O2-δ (001) epitaxial thin film on magnetism at 300 K was investigated. Films with a capping layer showed increased magnetization mainly caused by enhanced out-of-plane magnetization. In addition, the ultrathin capping layer was useful in prolonging the magnetization lifetime by more than two years. The thickness dependence of the magnetic domain structure at room temperature indicated the preservation of magnetic domain structure even for a 13 nm thick film covered with a capping layer. Taking into account nearly unchanged electric conductivity irrespective of the capping layer’s thickness, the main role of the capping layer is to prevent surface oxidation, which reduces electron carriers on the surface.

AB - The effect of an ultrathin TiO2 capping layer on an anatase Ti0.95Co0.05O2-δ (001) epitaxial thin film on magnetism at 300 K was investigated. Films with a capping layer showed increased magnetization mainly caused by enhanced out-of-plane magnetization. In addition, the ultrathin capping layer was useful in prolonging the magnetization lifetime by more than two years. The thickness dependence of the magnetic domain structure at room temperature indicated the preservation of magnetic domain structure even for a 13 nm thick film covered with a capping layer. Taking into account nearly unchanged electric conductivity irrespective of the capping layer’s thickness, the main role of the capping layer is to prevent surface oxidation, which reduces electron carriers on the surface.

KW - Capping layer

KW - Co-doped TiO

KW - Ferromagnetic oxide semiconductor

KW - Magnetic domain structure

KW - Magnetically dead layer

KW - Room temperature ferromagnetism

KW - Surface oxidation

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