The recovery of a magnetically dead layer on the surface of an anatase (Ti,Co)O2 thin film via an ultrathin TiO2 capping layer

Thantip S. Krasienapibal, Tomoteru Fukumura, Tetsuya Hasegawa

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The effect of an ultrathin TiO2 capping layer on an anatase Ti0.95Co0.05O2-δ (001) epitaxial thin film on magnetism at 300 K was investigated. Films with a capping layer showed increased magnetization mainly caused by enhanced out-of-plane magnetization. In addition, the ultrathin capping layer was useful in prolonging the magnetization lifetime by more than two years. The thickness dependence of the magnetic domain structure at room temperature indicated the preservation of magnetic domain structure even for a 13 nm thick film covered with a capping layer. Taking into account nearly unchanged electric conductivity irrespective of the capping layer’s thickness, the main role of the capping layer is to prevent surface oxidation, which reduces electron carriers on the surface.

Original languageEnglish
Article number23
JournalElectronics (Switzerland)
Volume6
Issue number1
DOIs
Publication statusPublished - 2017 Mar 18

Keywords

  • Capping layer
  • Co-doped TiO
  • Ferromagnetic oxide semiconductor
  • Magnetic domain structure
  • Magnetically dead layer
  • Room temperature ferromagnetism
  • Surface oxidation

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Signal Processing
  • Hardware and Architecture
  • Computer Networks and Communications
  • Electrical and Electronic Engineering

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