The reason why thin-film silicon grows layer by layer in plasma-enhanced chemical vapor deposition

Takuya Kuwahara, Hiroshi Ito, Kentaro Kawaguchi, Yuji Higuchi, Nobuki Ozawa, Momoji Kubo

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Thin-film Si grows layer by layer on Si(001)-(2 × 1):H in plasma-enhanced chemical vapor deposition. Here we investigate the reason why this occurs by using quantum chemical molecular dynamics and density functional theory calculations. We propose a dangling bond (DB) diffusion model as an alternative to the SiH 3 diffusion model, which is in conflict with first-principles calculation results and does not match the experimental evidence. In our model, DBs diffuse rapidly along an upper layer consisting of Si-H 3 sites, and then migrate from the upper layer to a lower layer consisting of Si-H sites. The subsequently incident SiH 3 radical is then adsorbed onto the DB in the lower layer, producing two-dimensional growth. We find that DB diffusion appears analogous to H diffusion and can explain the reason why the layer-by-layer growth occurs.

Original languageEnglish
Article number9052
JournalScientific reports
Volume5
DOIs
Publication statusPublished - 2015 Mar 16

ASJC Scopus subject areas

  • General

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