TY - JOUR
T1 - The process of GaN single crystal growth by the Na flux method with Na vapor
AU - Yamada, Takahiro
AU - Yamane, Hisanori
AU - Iwata, Hirokazu
AU - Sarayama, Seiji
N1 - Funding Information:
The authors would like to thank Prof. F.J. Disalvo (Cornell Univ.) for reading the manuscript of this paper. This work was supported in part by Special Coordination Funds from the Ministry of Education, Culture, Sports, Science and Technology.
PY - 2006/1/15
Y1 - 2006/1/15
N2 - Ga melts were heated in a boron nitride crucible at 800 °C and 5 MPa of N2 for 8-200 h with Na vapor. Colorless and transparent prismatic GaN single crystals grew from a Na-Ga melt which was formed by dissolution of Na from the gas phase. Nitrogen was probably introduced into the melt with Na. The time dependence of the Na fraction (rNa=Na/(Na+Ga)) in the melts and the yields of GaN were investigated. rNa increased to 0.39-0.43 within 100 h, and then became almost constant at this value. The yield of GaN was less than 2% at 50 h. The yield increased linearly with heating time after 75 h, and reached 57% at 200 h. GaN single crystals with a size of 1.5 mm long were obtained on the bottom of the crucible wall. The largest crystals (3.0 mm-long and 1.2 mm-wide) grew at the edges of the melt and of the GaN crystal formation area near the bottom wall of the crucible.
AB - Ga melts were heated in a boron nitride crucible at 800 °C and 5 MPa of N2 for 8-200 h with Na vapor. Colorless and transparent prismatic GaN single crystals grew from a Na-Ga melt which was formed by dissolution of Na from the gas phase. Nitrogen was probably introduced into the melt with Na. The time dependence of the Na fraction (rNa=Na/(Na+Ga)) in the melts and the yields of GaN were investigated. rNa increased to 0.39-0.43 within 100 h, and then became almost constant at this value. The yield of GaN was less than 2% at 50 h. The yield increased linearly with heating time after 75 h, and reached 57% at 200 h. GaN single crystals with a size of 1.5 mm long were obtained on the bottom of the crucible wall. The largest crystals (3.0 mm-long and 1.2 mm-wide) grew at the edges of the melt and of the GaN crystal formation area near the bottom wall of the crucible.
KW - A2. Growth from solutions
KW - A2. Single crystal growth
KW - B1. Gallium compounds
KW - B1. Nitrides
KW - B2. Semiconducting III-V materials
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U2 - 10.1016/j.jcrysgro.2005.10.073
DO - 10.1016/j.jcrysgro.2005.10.073
M3 - Article
AN - SCOPUS:29344467887
VL - 286
SP - 494
EP - 497
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 2
ER -