The perpendicular anisotropy of Co40Fe40B 20 sandwiched between Ta and MgO layers and its application in CoFeB/MgO/CoFeB tunnel junction

W. X. Wang; Y. Yang; H. Naganuma; Y. Ando; R. C. Yu; X. F. Han

doi:10.1063/1.3605564

The perpendicular anisotropy of Co₄₀Fe₄₀B ₂₀ sandwiched between Ta and MgO layers and its application in CoFeB/MgO/CoFeB tunnel junction

W. X. Wang, Y. Yang, H. Naganuma, Y. Ando, R. C. Yu, X. F. Han

ENG - Applied Physics

Research output: Contribution to journal › Article › peer-review

101 Citations (Scopus)

Abstract

Magnetic anisotropy of Co₄₀Fe₄₀B₂₀ thin films sandwiched between Ta and MgO layers was investigated. Magnetic properties of CoFeB layers deposited on top and bottom of MgO layer are different. The thickness of the CoFeB layer and annealing temperature are the critical parameters to achieve and keep the perpendicular magnetic anisotropy. The phase diagram of perpendicular anisotropic strength of CoFeB layers on annealing temperatures and thicknesses of CoFeB layers is observed. According to phase diagrams, perpendicular CoFeB/MgO/CoFeB tunnel junctions were fabricated, and tunneling magnetoresistance (TMR) ratio was higher than 30 at low temperatures.

Original language	English
Article number	012502
Journal	Applied Physics Letters
Volume	99
Issue number	1
DOIs	https://doi.org/10.1063/1.3605564
Publication status	Published - 2011 Jul 4

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "The perpendicular anisotropy of Co40Fe40B 20 sandwiched between Ta and MgO layers and its application in CoFeB/MgO/CoFeB tunnel junction",

abstract = "Magnetic anisotropy of Co40Fe40B20 thin films sandwiched between Ta and MgO layers was investigated. Magnetic properties of CoFeB layers deposited on top and bottom of MgO layer are different. The thickness of the CoFeB layer and annealing temperature are the critical parameters to achieve and keep the perpendicular magnetic anisotropy. The phase diagram of perpendicular anisotropic strength of CoFeB layers on annealing temperatures and thicknesses of CoFeB layers is observed. According to phase diagrams, perpendicular CoFeB/MgO/CoFeB tunnel junctions were fabricated, and tunneling magnetoresistance (TMR) ratio was higher than 30 at low temperatures.",

author = "Wang, {W. X.} and Y. Yang and H. Naganuma and Y. Ando and Yu, {R. C.} and Han, {X. F.}",

note = "Funding Information: The project was supported by the NSFC-JSPS international Joint Research Fund, the JSPS (FIRST program), the NSFC (Grant Nos. 10934099, 10874225, 10974235, and 51021061) and the State Key Project of Fundamental Research of Ministry of Science and Technology (MOST, No. 2010CB934400).",

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T1 - The perpendicular anisotropy of Co40Fe40B 20 sandwiched between Ta and MgO layers and its application in CoFeB/MgO/CoFeB tunnel junction

AU - Wang, W. X.

AU - Yang, Y.

AU - Naganuma, H.

AU - Ando, Y.

AU - Yu, R. C.

AU - Han, X. F.

N1 - Funding Information: The project was supported by the NSFC-JSPS international Joint Research Fund, the JSPS (FIRST program), the NSFC (Grant Nos. 10934099, 10874225, 10974235, and 51021061) and the State Key Project of Fundamental Research of Ministry of Science and Technology (MOST, No. 2010CB934400).

PY - 2011/7/4

Y1 - 2011/7/4

N2 - Magnetic anisotropy of Co40Fe40B20 thin films sandwiched between Ta and MgO layers was investigated. Magnetic properties of CoFeB layers deposited on top and bottom of MgO layer are different. The thickness of the CoFeB layer and annealing temperature are the critical parameters to achieve and keep the perpendicular magnetic anisotropy. The phase diagram of perpendicular anisotropic strength of CoFeB layers on annealing temperatures and thicknesses of CoFeB layers is observed. According to phase diagrams, perpendicular CoFeB/MgO/CoFeB tunnel junctions were fabricated, and tunneling magnetoresistance (TMR) ratio was higher than 30 at low temperatures.

AB - Magnetic anisotropy of Co40Fe40B20 thin films sandwiched between Ta and MgO layers was investigated. Magnetic properties of CoFeB layers deposited on top and bottom of MgO layer are different. The thickness of the CoFeB layer and annealing temperature are the critical parameters to achieve and keep the perpendicular magnetic anisotropy. The phase diagram of perpendicular anisotropic strength of CoFeB layers on annealing temperatures and thicknesses of CoFeB layers is observed. According to phase diagrams, perpendicular CoFeB/MgO/CoFeB tunnel junctions were fabricated, and tunneling magnetoresistance (TMR) ratio was higher than 30 at low temperatures.

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The perpendicular anisotropy of Co₄₀Fe₄₀B ₂₀ sandwiched between Ta and MgO layers and its application in CoFeB/MgO/CoFeB tunnel junction

Abstract

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