TY - GEN
T1 - The origin of field-induced electron emission from N-doped CVD diamond characterized by combined XPS/UPS/FES system
AU - Yamaguchi, Hisato
AU - Kudo, Yuki
AU - Masuzawa, Tomoaki
AU - Shiraki, Yoshifumi
AU - Saito, Ichitaro
AU - Kudo, Masato
AU - Yamada, Takatoshi
AU - Takakuwa, Yuji
AU - Okano, Ken
PY - 2008
Y1 - 2008
N2 - The origin of field-emitted electrons for hydrogen-terminated natural IIb diamond was investigated as a reference to define the origin of field-emitted electrons from lightly nitrogen (N)-doped chemical vapor deposition (CVD) diamond. Using our combined X-ray photoelectron spectroscopy / ultraviolet photoelectron spectroscopy / field emission spectroscopy (XPS/UPS/FES) system, we determined the origin of field-emitted electrons for the natural diamond. The energy level of field-emitted electrons was at valence band maximum (VBM) and the origin of field-emitted electrons was independent of applied voltages. The results suggested the observed shift for FES peak of lightly N-doped CVD diamond is most likely due to the resistance of the diamond bulk. The FES Peak Energy - Emission Current characteristics was best fitted to straight lines, and the resistance of the diamond was consistent with the resistance obtained from the slope. In addition, an attempt was made to define the origin of field-induced electron emission for heavily N-doped CVD diamond. The result suggested a possibility of conduction band minimum (CBM) as an origin of emitted electrons.
AB - The origin of field-emitted electrons for hydrogen-terminated natural IIb diamond was investigated as a reference to define the origin of field-emitted electrons from lightly nitrogen (N)-doped chemical vapor deposition (CVD) diamond. Using our combined X-ray photoelectron spectroscopy / ultraviolet photoelectron spectroscopy / field emission spectroscopy (XPS/UPS/FES) system, we determined the origin of field-emitted electrons for the natural diamond. The energy level of field-emitted electrons was at valence band maximum (VBM) and the origin of field-emitted electrons was independent of applied voltages. The results suggested the observed shift for FES peak of lightly N-doped CVD diamond is most likely due to the resistance of the diamond bulk. The FES Peak Energy - Emission Current characteristics was best fitted to straight lines, and the resistance of the diamond was consistent with the resistance obtained from the slope. In addition, an attempt was made to define the origin of field-induced electron emission for heavily N-doped CVD diamond. The result suggested a possibility of conduction band minimum (CBM) as an origin of emitted electrons.
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M3 - Conference contribution
AN - SCOPUS:55649097314
SN - 9781558999862
T3 - Materials Research Society Symposium Proceedings
SP - 135
EP - 141
BT - Materials Research Society Symposium Proceedings
T2 - Diamond Electronics - Fundamentals to Applications II
Y2 - 26 November 2007 through 30 November 2007
ER -