The magnetoresistance of Fe/MgO/GaAs/MgO/Fe junctions

Fuminori Mitsuhash, Nobuki Tezuka, Satoshi Sugimoto

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


We investigated the structure and magnetoresistance effect for the Fe/MgO/GaAs/MgO/Fe junctions. The junctions were deposited on MgO(001) single crystal substrate by Molecular Beam Epitaxy. RHEED patterns and XRD pole profiles reveal that bottom electrodes, Fe, and inter layers, n-GaAs, grow epitaxially. While RHEED patterns reveal that upper electrodes, Fe, grow in a polycrystal form. The junctions exhibit magnetoresistance ratio of 3.2% at room temperature. The magnetoresistance curves correspond to the magnetization alignment between the bottom and the upper Fe electrodes. These results indicate that the magnetoresistance effect originates from spin injection from Fe to GaAs through MgO barriers.

Original languageEnglish
Pages (from-to)251-254
Number of pages4
JournalNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
Issue number4
Publication statusPublished - 2009 Apr


  • Spin injection
  • Spintronics
  • Tunnel magnetoresistance

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys
  • Materials Chemistry


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