The initial stages of the thermal oxidation of si(001)2 x 1 surface studied by scanning tunneling microscopy

Masaharu Udagawa, Masaaki Nlwa, Isao Sumita

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

The initial stages of the thermal oxidation of Si(00l)2 x 1 surface were studied by scanning tunneling microscopy. The O2exposure at 600°C produced Si islands and initial oxides. The oxides appeared as “dark sites”, “sequence of dots”, and “dots with dark surroundings”. Among the oxides, most of the “dark sites” were removed by successive heating at 600°C, while the “sequence of dots” and the “dots with dark surroundings” remained. All the oxides were removed by successive heating at 800°C. The thermal oxidation of Si(00l) 2x1 surface is discussed in terms of these sites.

Original languageEnglish
Pages (from-to)282-285
Number of pages4
JournalJapanese journal of applied physics
Volume32
Issue number1 S
DOIs
Publication statusPublished - 1993 Jan
Externally publishedYes

Keywords

  • 02 exposure
  • Heating
  • Interface
  • Oxide
  • Scanning tunnelingmicroscopy
  • Si
  • Si(001)2xl surface
  • Thermal oxidation
  • Ultrahigh vacuum

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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