Abstract
The initial stages of the thermal oxidation of Si(00l)2 x 1 surface were studied by scanning tunneling microscopy. The O2exposure at 600°C produced Si islands and initial oxides. The oxides appeared as “dark sites”, “sequence of dots”, and “dots with dark surroundings”. Among the oxides, most of the “dark sites” were removed by successive heating at 600°C, while the “sequence of dots” and the “dots with dark surroundings” remained. All the oxides were removed by successive heating at 800°C. The thermal oxidation of Si(00l) 2x1 surface is discussed in terms of these sites.
| Original language | English |
|---|---|
| Pages (from-to) | 282-285 |
| Number of pages | 4 |
| Journal | Japanese journal of applied physics |
| Volume | 32 |
| Issue number | 1 S |
| DOIs | |
| Publication status | Published - 1993 Jan |
| Externally published | Yes |
Keywords
- 02 exposure
- Heating
- Interface
- Oxide
- Scanning tunnelingmicroscopy
- Si
- Si(001)2xl surface
- Thermal oxidation
- Ultrahigh vacuum
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)