The initial stages of the thermal oxidation of Si(001) 2×1 surface studied by scanning tunneling microscopy

Masaharu Udagawa; Masaaki Niwa; Isao Sumita

doi:10.1063/1.351912

The initial stages of the thermal oxidation of Si(001) 2×1 surface studied by scanning tunneling microscopy

Masaharu Udagawa, Masaaki Niwa, Isao Sumita

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The initial stages of the thermal oxidation of Si(001) 2×1 surface were studied by scanning tunneling microscopy. The O₂ exposure at 600°C produced Si islands and initial forms of oxides. The oxides appeared as "dark sites," sequence of dots," and "dots with dark surroundings." Among the oxides, most of the dark sites were removed by the successive heating at 600°C, while the sequence of dots and the dots with dark surroundings remained. All the oxides were removed by the successive heating at 800°C. The thermal oxidation of Si(001) 2×1 surface is discussed in terms of these sites.

Original language	English
Pages (from-to)	6017-6019
Number of pages	3
Journal	Journal of Applied Physics
Volume	72
Issue number	12
DOIs	https://doi.org/10.1063/1.351912
Publication status	Published - 1992 Dec 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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AU - Udagawa, Masaharu

AU - Niwa, Masaaki

AU - Sumita, Isao

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Y1 - 1992/12/1

N2 - The initial stages of the thermal oxidation of Si(001) 2×1 surface were studied by scanning tunneling microscopy. The O2 exposure at 600°C produced Si islands and initial forms of oxides. The oxides appeared as "dark sites," sequence of dots," and "dots with dark surroundings." Among the oxides, most of the dark sites were removed by the successive heating at 600°C, while the sequence of dots and the dots with dark surroundings remained. All the oxides were removed by the successive heating at 800°C. The thermal oxidation of Si(001) 2×1 surface is discussed in terms of these sites.

AB - The initial stages of the thermal oxidation of Si(001) 2×1 surface were studied by scanning tunneling microscopy. The O2 exposure at 600°C produced Si islands and initial forms of oxides. The oxides appeared as "dark sites," sequence of dots," and "dots with dark surroundings." Among the oxides, most of the dark sites were removed by the successive heating at 600°C, while the sequence of dots and the dots with dark surroundings remained. All the oxides were removed by the successive heating at 800°C. The thermal oxidation of Si(001) 2×1 surface is discussed in terms of these sites.

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