The influence of impurity profile on ultra-shallow GaAs sidewall tunnel junction characteristics

Takeo Ohno, Yutaka Oyama, Jun ichi Nishizawa

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Dynamic SIMS has been applied to investigate the influence of impurity profiles on the characteristics of ultra-shallow GaAs sidewall tunnel junctions. SIMS depth profile on test-element-group areas on the device chips have shown that the Be profiles pile-up, with concentrations of up to 10 20 cm -3 at the tunnel junction interfaces. This result illustrates one of the dominant causes why very high peak current densities are achieved.

Original languageEnglish
Pages (from-to)7283-7285
Number of pages3
JournalApplied Surface Science
Volume252
Issue number19
DOIs
Publication statusPublished - 2006 Jul 30

Keywords

  • Dynamic SIMS
  • Epitaxial growth
  • GaAs
  • Impurity doping
  • Semiconductor
  • Tunnel junction

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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