TY - JOUR
T1 - The influence of 180° ferroelectric domain wall width on the threshold field for wall motion
AU - Choudhury, Samrat
AU - Li, Yulan
AU - Odagawa, Nozomi
AU - Vasudevarao, Aravind
AU - Tian, L.
AU - Capek, Pavel
AU - Dierolf, Volkmar
AU - Morozovska, Anna N.
AU - Eliseev, Eugene A.
AU - Kalinin, Sergei
AU - Cho, Yasuo
AU - Chen, Long Qing
AU - Gopalan, Venkatraman
N1 - Funding Information:
We would like to gratefully acknowledge NSF Grant Nos. DMR-0507146, DMR-0512165, DMR-0820404, DMR–0602986, ARO Grant No. W911NF-04–1–0323 and DOE Grant No. DE-FG02–07ER46417. Research was also sponsored in part by the Division of Materials Sciences and Engineering, Office of Basic Energy Sciences, U.S. Department of Energy, under Contract No. DE-AC05-00OR22725 and CNMS2008–289 with Oak Ridge National Laboratory.
PY - 2008
Y1 - 2008
N2 - Unlike ideal 180° ferroelectric walls that are a unit cell wide (∼0.5 nm), real walls in ferroelectrics have been reported to be many nanometers wide (1-10 nm). Using scanning nonlinear dielectric microscopy of lithium niobate (LiNbO3) and lithium tantalate (LiTaO3) ferroelectrics, we show that the wall width at surfaces can vary considerably and even reach ∼100 nm in places where polar defects adjoin a wall. The consequence of such variable wall widths is investigated on the specific property of threshold field required for wall motion. Using microscopic phase-field modeling, we show that the threshold field for moving an antiparallel ferroelectric domain wall dramatically drops by two to three orders of magnitude if the wall was diffuse by only ∼1-2 nm, which agrees with experimental wall widths and threshold fields for these materials. Modeling also shows that wall broadening due to its intersection with a surface will influence the threshold field for wall motion only for very thin films (1-10 nm) where the surface broadening influences the bulk wall width. Such pre-existing and slightly diffuse domain walls with low threshold fields for wall motion may offer a general mechanism to explain significantly lower experimental coercive fields for domain reversal in ferroelectrics as compared to the thermodynamic predictions.
AB - Unlike ideal 180° ferroelectric walls that are a unit cell wide (∼0.5 nm), real walls in ferroelectrics have been reported to be many nanometers wide (1-10 nm). Using scanning nonlinear dielectric microscopy of lithium niobate (LiNbO3) and lithium tantalate (LiTaO3) ferroelectrics, we show that the wall width at surfaces can vary considerably and even reach ∼100 nm in places where polar defects adjoin a wall. The consequence of such variable wall widths is investigated on the specific property of threshold field required for wall motion. Using microscopic phase-field modeling, we show that the threshold field for moving an antiparallel ferroelectric domain wall dramatically drops by two to three orders of magnitude if the wall was diffuse by only ∼1-2 nm, which agrees with experimental wall widths and threshold fields for these materials. Modeling also shows that wall broadening due to its intersection with a surface will influence the threshold field for wall motion only for very thin films (1-10 nm) where the surface broadening influences the bulk wall width. Such pre-existing and slightly diffuse domain walls with low threshold fields for wall motion may offer a general mechanism to explain significantly lower experimental coercive fields for domain reversal in ferroelectrics as compared to the thermodynamic predictions.
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U2 - 10.1063/1.3000459
DO - 10.1063/1.3000459
M3 - Article
AN - SCOPUS:55249096481
VL - 104
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 8
M1 - 084107
ER -