The in situ observation of faceted dendrite growth during the directional solidification of GaSb

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Abstract

In this work, crystal–melt interfaces were directly observed during the directional solidification of molten GaSb having a stoichiometric composition, and the formation of dendrite structures was studied. With increases in growth velocity, the planar crystal–melt interface became unstable and dendrite growth was initiated. Dendrites having {111} facets were found to grow in either the 〈110〉 or 〈112〉 directions, and a pair of twin boundaries was identified at the center of a dendrite. The results show that the growth of dendrites in GaSb is associated with nucleation at twin-related reentrant corners.

Original languageEnglish
Pages (from-to)56-60
Number of pages5
JournalScripta Materialia
Volume168
DOIs
Publication statusPublished - 2019 Jul 15

Keywords

  • Compound semiconductors
  • Dendritic growth
  • Directional solidification
  • Twinning

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys

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