The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive switching random access memory devices

Sridhar Chandrasekaran, Firman Mangasa Simanjuntak, Rakesh Aluguri, Tseung Yuen Tseng

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The effect of TiW metal barrier layer thickness on voltage-current characteristics of the Cu/TiW/ZrO2/TiN conductive bridge random access memory device was systematically investigated. The change of reset behavior from abrupt decrease to gradual decrease with increasing TiW thickness was observed. Electronic conduction during the forming process was also analyzed to obtain detailed information about the effect of TiW layer thickness on the nature of the conduction phenomenon. The temperature coefficient of resistance of the conductive filament confirms that an electro-chemical metallization (ECM) based conduction was observed in the devices made with a thinner TiW layer. On the other hand, valence change memory (VCM) based conduction was observed with a thick TiW layer. A conduction mechanism is proposed to explain the ECM to VCM conduction transformation phenomenon.

Original languageEnglish
Pages (from-to)777-781
Number of pages5
JournalThin Solid Films
Volume660
DOIs
Publication statusPublished - 2018 Aug 30

Keywords

  • Conductive filament
  • Electro-chemical metallization
  • Switching device
  • Titanium tungsten alloy
  • Valence change memory
  • Zirconium dioxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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