The impact of surface defects on SiC schottky and ohmic contact formation

L. J. Brillson, S. P. Tumakha, M. Gao, D. J. Ewing, L. M. Porter, R. S. Okojie, M. Zhang, P. Pirouz, Q. Wahab, X. Ma, T. S. Sudharshan, T. Onishi, S. Tsukimoto, M. Murakami

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Original languageEnglish
    Title of host publication2005 International Semiconductor Device Research Symposium
    Pages141-142
    Number of pages2
    Publication statusPublished - 2005
    Event2005 International Semiconductor Device Research Symposium - Bethesda, MD, United States
    Duration: 2005 Dec 72005 Dec 9

    Publication series

    Name2005 International Semiconductor Device Research Symposium
    Volume2005

    Other

    Other2005 International Semiconductor Device Research Symposium
    Country/TerritoryUnited States
    CityBethesda, MD
    Period05/12/705/12/9

    ASJC Scopus subject areas

    • Engineering(all)

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