The impact of Ge codoping on grown-in O precipitates in Ga-doped Czochralski-silicon

Mukannan Arivanandhan, Raira Gotoh, Kozo Fujiwara, Tetsuo Ozawa, Yasuhiro Hayakawa, Satoshi Uda

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The intensity of the infrared absorption band at 1107 cm-1, related to interstitial oxygen (Oi) concentration, decreased as the Ge concentration increased in Ga and Ge codoped CZSi crystals. In contrast, the number of precipitates observed on the etched surfaces of CZSi wafers increased as the Ge concentration increased. From an energy dispersive X-ray (EDX) analysis, O was observed to be one of the major components of the precipitates. Moreover, Ge was found as one of the components in the precipitate observed on the heavily Ge (>1×1018 cm-3) codoped CZSi wafers. These results suggest that the grown-in O precipitates increase as the Oi concentration decreases when the Ge concentration increases in the Si crystal. The Ge-vacancy (V) complex in the Si lattice probably acted as a heterogeneous nucleation center and may enhanced the grown-in O precipitates thereby reducing the dissolved Oi concentration in the Si lattice.

Original languageEnglish
Pages (from-to)24-28
Number of pages5
JournalJournal of Crystal Growth
Volume321
Issue number1
DOIs
Publication statusPublished - 2011 Apr 15

Keywords

  • A1. Codoping
  • A1. Point defects
  • A2. Czochralski method
  • B2. Semiconductor silicon

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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