The impact of an intermediate temperature buffer on the growth of GaN on an AlN template by hydride vapor phase epitaxy

Youngji Cho, Jun Seok Ha, Mina Jung, Hyun Jae Lee, Seunghwan Park, Jinsub Park, Katsushi Fujii, Ryuichi Toba, Samnyung Yi, Gyung Suk Kil, Jiho Chang, Takafumi Yao

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Engineering & Materials Science

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