The impact of an intermediate temperature buffer on the growth of GaN on an AlN template by hydride vapor phase epitaxy

Youngji Cho, Jun Seok Ha, Mina Jung, Hyun Jae Lee, Seunghwan Park, Jinsub Park, Katsushi Fujii, Ryuichi Toba, Samnyung Yi, Gyung Suk Kil, Jiho Chang, Takafumi Yao

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3 Citations (Scopus)

Abstract

The present study focused on the effect of an intermediate-temperature (IT; ∼900 °C) buffer layer on GaN films, grown on an AlN/sapphire template by hydride vapor phase epitaxy (HVPE). In this paper, the surface morphology, structural quality, residual strain, and luminescence properties are discussed in terms of the effect of the buffer layer. The GaN film with an IT-buffer revealed a relatively lower screw-dislocation density (3.29×107 cm-2) and a higher edge-dislocation density (8.157×109 cm-2) than the GaN film without an IT-buffer. Moreover, the IT-buffer reduced the residual strain and improved the luminescence. We found that the IT-buffer played an important role in the reduction of residual strain and screw-dislocation density in the overgrown layer through the generation of edge-type dislocations and the spontaneous treatment of the threading dislocation by interrupting the growth and increasing the temperature.

Original languageEnglish
Pages (from-to)1693-1696
Number of pages4
JournalJournal of Crystal Growth
Volume312
Issue number10
DOIs
Publication statusPublished - 2010 May 1

Keywords

  • A1. Threading dislocation
  • A3. Hydride vapor phase epitaxy
  • A3. Intermediate-temperature buffer layer
  • B1. Gallium nitride

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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    Cho, Y., Ha, J. S., Jung, M., Lee, H. J., Park, S., Park, J., Fujii, K., Toba, R., Yi, S., Kil, G. S., Chang, J., & Yao, T. (2010). The impact of an intermediate temperature buffer on the growth of GaN on an AlN template by hydride vapor phase epitaxy. Journal of Crystal Growth, 312(10), 1693-1696. https://doi.org/10.1016/j.jcrysgro.2010.02.016