The hot carrier dynamics in InGaN multi-quantum well structure

A. Shikanai, K. Kojima, K. Omae, Y. Kawakami, Y. Narukawa, T. Mukai, Sg Fujita

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1 Citation (Scopus)


We investigated the hot carrier dynamics in InGaN mutli-quantum wells using phtoluminescence, time-resolved photoruminescence (TRPL) and white-light pump and probe methods at room temperature. The pump and probe spectra or ΔOD spectra have not reflected the screening of electric field by photoexcited carriers but the distribution of hot carriers. It reflects the band filling of the tail state in lower energy side and Maxwell-Boltzmann-like tail of hot carriers on the higher energy side. ΔOD spectra in 1.5 ps rose in the observed spectral region, which indicates that thermalization among carriers is very fast. It is because of carrier-LO phonon and carrier-carrier interaction. After 2 ps ΔOD spectra are red shifted as increasing the time delay. At 40 ps time delay, the Maxwell-Boltzmann-like tail shows still the high temperature of carriers. This slow cooling is likely due to the hot phonon effects where the nonequilibrium phonon population may lead to a reabsorption of phonons by photoexcited carriers.

Original languageEnglish
Pages (from-to)392-395
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Issue number2
Publication statusPublished - 2003 Nov 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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