The high temperature thermoelectric properties of Te-doped TiCoSb Half-Heusler compounds

Ting Wu, Wan Jiang, Lidong Chen, Xiaoya Li, Jianfeng Zhang

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Half-Heusler compounds of Te-doped TiCoSb were prepared by solid-state reaction. XRD analysis confirmed that all the sample were crystallized in the single-phase. Their thermoelectric properties were measured in the temperature rang of 300-850 K. The un-doped TiCoSb compound shows n-type conduction and possesses high Seebeck coefficient at high temperatures. Te doping on Sb site results in a significant reduction of the electrical resistivity and Seebeck coefficient. The thermal conductivity also decreases little with increasing Te content. The maximum value of ZT is nearly 5 times larger than the un-doped TiCoSb compounds.

    Original languageEnglish
    Pages (from-to)412-414
    Number of pages3
    JournalXiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering
    Volume36
    Issue numberSUPPL. 2
    Publication statusPublished - 2007 Aug 1

    Keywords

    • Half-Heusler compounds
    • Solid-state reaction
    • Thermoelectric properties
    • TiCoSb

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Metals and Alloys
    • Electrical and Electronic Engineering
    • Materials Chemistry

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