The high quality ZnO growth on c-Al 2 O 3 substrate with Cr 2 O 3 buffer layer using plasma-assisted molecular beam epitaxy

J. S. Park, S. K. Hong, T. Minegishi, I. H. Im, S. H. Park, T. Hanada, J. H. Chang, M. W. Cho, T. Yao

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

High quality epitaxial ZnO films were grown on c-Al 2 O 3 substrates with Cr 2 O 3 buffer layer by plasma-assisted molecular beam epitaxy (P-MBE). The hexagonal crystalline Cr 2 O 3 layer was formed by oxidation of the Cr-metal layer deposited on the c-Al 2 O 3 substrate using oxygen plasma. The epitaxial relationship was determined to be [ 1 over(1, ̄) 0 0 ]ZnO//[ 1 1 over(2, ̄) 0 ]Cr 2 O 3 //[ 1 over(1, ̄) 0 ]Cr//[ 1 1 over(2, ̄) 0 ]Al 2 O 3 and [ 1 1 over(2, ̄) 0 ]ZnO//[ 1 over(1, ̄) 0 0 ]Cr 2 O 3 //[0 0 1]Cr//[ 1 over(1, ̄) 0 0 ]Al 2 O 3. The Cr 2 O 3 buffer layer was very effective in improving the surface morphology and crystal quality of the ZnO films. The photoluminescence spectrum showed the strong near band-edge emissions with the weak deep-level emission, which implies high optical quality of the ZnO films grown on the Cr 2 O 3 buffer.

Original languageEnglish
Pages (from-to)7786-7789
Number of pages4
JournalApplied Surface Science
Volume254
Issue number23
DOIs
Publication statusPublished - 2008 Sep 30

Keywords

  • Buffer
  • Cr O
  • MBE
  • ZnO

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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