Abstract
High quality epitaxial ZnO films were grown on c-Al 2 O 3 substrates with Cr 2 O 3 buffer layer by plasma-assisted molecular beam epitaxy (P-MBE). The hexagonal crystalline Cr 2 O 3 layer was formed by oxidation of the Cr-metal layer deposited on the c-Al 2 O 3 substrate using oxygen plasma. The epitaxial relationship was determined to be [ 1 over(1, ̄) 0 0 ]ZnO//[ 1 1 over(2, ̄) 0 ]Cr 2 O 3 //[ 1 over(1, ̄) 0 ]Cr//[ 1 1 over(2, ̄) 0 ]Al 2 O 3 and [ 1 1 over(2, ̄) 0 ]ZnO//[ 1 over(1, ̄) 0 0 ]Cr 2 O 3 //[0 0 1]Cr//[ 1 over(1, ̄) 0 0 ]Al 2 O 3. The Cr 2 O 3 buffer layer was very effective in improving the surface morphology and crystal quality of the ZnO films. The photoluminescence spectrum showed the strong near band-edge emissions with the weak deep-level emission, which implies high optical quality of the ZnO films grown on the Cr 2 O 3 buffer.
Original language | English |
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Pages (from-to) | 7786-7789 |
Number of pages | 4 |
Journal | Applied Surface Science |
Volume | 254 |
Issue number | 23 |
DOIs | |
Publication status | Published - 2008 Sep 30 |
Keywords
- Buffer
- Cr O
- MBE
- ZnO
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films