@inproceedings{502f9ee43b474c5ea75425abd62ad0ec,
title = "The growth process analysis of the ZnTe layer on the m-plane sapphire substrate with nano-facet structures",
abstract = "ZnTe thin films were grown on m-plane sapphire substrates with nano-faceted structure by MBE. The growth process of the ZnTe thin film was analyzed by AFM. The influence of the nano-facet on the crystal quality of the epilayer was studied by means of XRD pole figure and PL measurements. It was confirmed that (331)-plane ZnTe layer was formed on the m-plane sapphire substrate with nano-faceted structure and the ZnTe epilayer grown of the nano-facet structure exhibited the single domain structure with high optical properties.",
keywords = "molecular beam epitaxy, nano-facet structure, sapphire, zinc telluride",
author = "T. Nakasu and T. Kizu and W. Sun and F. Kazami and M. Kobayashi and T. Asahi",
year = "2016",
month = aug,
day = "1",
doi = "10.1109/ICIPRM.2016.7528603",
language = "English",
series = "2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016",
note = "2016 Compound Semiconductor Week, CSW 2016 ; Conference date: 26-06-2016 Through 30-06-2016",
}