The growth of ZnO on ON buffer layer using surface phase control by plasma assisted molecular-beam epitaxy

Jinsub Park, Tsutomu Minegishi, Seunghwan Park, Inho Im, Takahasi Hanada, Soonku Hong, Takenari Goto, Meoungwhan Cho, Takafumi Yao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Epitaxial ZnO films are successfully grown on Al2O3 substrates with phase controlled CrN buffer layer using Zn and O-plasma pre-exposures on CrN layers by plasma assisted molecular beam epitaxy (P-MBE). The Zn exposures on CrN layers prior to ZnO film growth result in the formation of rocksalt CrN without surface oxidation. On the other hand, the surface of the initially deposited CrN layers with rocksalt structure changes into hexagonal structured Cr2O3 after O-plasma exposure as confirmed by reflection high-energy electron diffraction (RHEED) and high resolution transmission electron microscopy (HR TEM). Etching studies show that the ZnO films grown on CrN have +C polarity, while the polarity of ZnO on Cr 2O3/CrN double buffer is -C polarity. The interdiffusion of Zn and Cr occurs at the ZnO/CrN interface, while the interdiffusion is negligible at the ZnO/Cr2O3 interface. The interdiffusion of Cr and Zn can be suppressed by inserting a low-temperature ZnO buffer layer in between ZnO and CrN layers, which helps improve the crystal quality of ZnO layers grown with CrN buffer.

Original languageEnglish
Title of host publicationZinc Oxide and Related Materials
Pages85-91
Number of pages7
Publication statusPublished - 2007 Jun 29
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: 2006 Nov 272006 Nov 29

Publication series

NameMaterials Research Society Symposium Proceedings
Volume957
ISSN (Print)0272-9172

Other

Other2006 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA
Period06/11/2706/11/29

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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