The growth of GaN films by alternate source gas supply hot-mesh CVD method

Yasuaki Komae, Takeshi Saitou, Maki Suemitsu, Takashi Ito, Tetsuo Endoh, Hideki Nakazawa, Yuzuru Narita, Masasuke Takata, Tadashi Akahane, Kanji Yasui

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Abstract

Gallium nitride (GaN) films and Aluminium nitride (AlN) layers were deposited on SiC/Si (111) substrates by an alternating source gas supply or an intermittent supply of a source gas such as ammonia (NH3), trimethylgallium (TMG) or trimethylaluminum (TMA) in a hot-mesh chemical vapor deposition (CVD) apparatus. The AlN layer was deposited as a buffer layer using NH3 and TMA on a SiC layer grown by carbonization on Si substrates using propane (C3H8). GaN films were grown on an AlN layer by a reaction between NHx radicals generated on a ruthenium (Ru) coated tungsten (W)-mesh and TMG molecules. An alternating source gas supply or an intermittent supply of one of the source gases during the film growth are expected to be effective for the suppression of gas phase reactions and for the enhancement of precursor migration on the substrate surface. By the intermittent supply of alkylmetal gas only during the growth of the AlN layer, the defect generation in the GaN films was reduced. GaN film growth by intermittent supply on an AlN buffer layer, however, did not lead to the improvement of the film quality.

Original languageEnglish
Pages (from-to)3528-3531
Number of pages4
JournalThin Solid Films
Volume517
Issue number12
DOIs
Publication statusPublished - 2009 Apr 30

Keywords

  • AlN
  • Alternating supply
  • GaN
  • Hot-mesh CVD
  • Intermittent supply

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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    Komae, Y., Saitou, T., Suemitsu, M., Ito, T., Endoh, T., Nakazawa, H., Narita, Y., Takata, M., Akahane, T., & Yasui, K. (2009). The growth of GaN films by alternate source gas supply hot-mesh CVD method. Thin Solid Films, 517(12), 3528-3531. https://doi.org/10.1016/j.tsf.2009.01.021