Abstract
We have investigated the growth mechanism of SiC film by the thermal reaction of C60 molecules adsorbed on a Si(111)-(7×7) surface using photoelectron spectroscopy. The growth of SiC film, performed by repeating the sample annealing at 1370 K following the adsorption of C60 molecules, is confirmed by the profile of the valence spectrum. The bonding nature between C60 molecules and the SiC surface is considered to have a covalent character at 300 and 670 K, and both covalent and ionic characters at 870 K by the thermal-dependent valence and C 1s core level spectra of a 1 monolayer C60 film adsorbed on SiC. Furthermore, we determined that the breaking of the C60 cage and the formation of SiC occurred at 1070 K, i.e. at a temperature 100 K lower than that on a Si(111) surface.
Original language | English |
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Pages (from-to) | 4536-4539 |
Number of pages | 4 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 39 |
Issue number | 7 B |
DOIs | |
Publication status | Published - 2000 |
Keywords
- Film growth
- Fullerenes
- Photoelectron spectroscopy
- Silicon
- Silicon carbide
- Thermal reaction
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)