The growth mechanism of SiC film on a Si(111)-(7×7) surface by C60 precursor studied by photoelectron spectroscopy

Kazuyuki Sakamoto, Daiyu Kondo, Kenichi Ohno, Akio Kimura, Akito Kakizaki, Shozo Suto, Wakio Uchida, Atsuo Kasuya

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We have investigated the growth mechanism of SiC film by the thermal reaction of C60 molecules adsorbed on a Si(111)-(7×7) surface using photoelectron spectroscopy. The growth of SiC film, performed by repeating the sample annealing at 1370 K following the adsorption of C60 molecules, is confirmed by the profile of the valence spectrum. The bonding nature between C60 molecules and the SiC surface is considered to have a covalent character at 300 and 670 K, and both covalent and ionic characters at 870 K by the thermal-dependent valence and C 1s core level spectra of a 1 monolayer C60 film adsorbed on SiC. Furthermore, we determined that the breaking of the C60 cage and the formation of SiC occurred at 1070 K, i.e. at a temperature 100 K lower than that on a Si(111) surface.

Original languageEnglish
Pages (from-to)4536-4539
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number7 B
DOIs
Publication statusPublished - 2000

Keywords

  • Film growth
  • Fullerenes
  • Photoelectron spectroscopy
  • Silicon
  • Silicon carbide
  • Thermal reaction

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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