The Fermi surface in the "Kondo semiconductor" CeNiSn

Taichi Terashima; Chieko Terakura; Shinya Uji; Haruyoshi Aoki; Yuji Echizen; Toshiro Takabatake

doi:10.1016/S0921-4526(02)02377-3

The Fermi surface in the "Kondo semiconductor" CeNiSn

Taichi Terashima, Chieko Terakura, Shinya Uji, Haruyoshi Aoki, Yuji Echizen, Toshiro Takabatake

Science

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We report on the resistivity in CeNiSn at temperatures down to 0.035 K and in magnetic fields up to 20 T. The resistivity as a function of temperature T exhibits T² dependence with a huge coefficient. Clear Shubnikov-de Haas (SdH) oscillations are observed for the two samples where the electrical current is applied along the b-axis, while possible traces of SdH oscillations are noticed for the other two samples where the current is applied along the a and c axes, respectively.

Original language	English
Pages (from-to)	535-536
Number of pages	2
Journal	Physica B: Condensed Matter
Volume	329-333
Issue number	II
DOIs	https://doi.org/10.1016/S0921-4526(02)02377-3
Publication status	Published - 2003 May

Keywords

CeNiSn
Fermi surface
Kondo semiconductors
Shubnikov-de Haas oscillations

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/S0921-4526(02)02377-3

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abstract = "We report on the resistivity in CeNiSn at temperatures down to 0.035 K and in magnetic fields up to 20 T. The resistivity as a function of temperature T exhibits T2 dependence with a huge coefficient. Clear Shubnikov-de Haas (SdH) oscillations are observed for the two samples where the electrical current is applied along the b-axis, while possible traces of SdH oscillations are noticed for the other two samples where the current is applied along the a and c axes, respectively.",

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T1 - The Fermi surface in the "Kondo semiconductor" CeNiSn

AU - Terashima, Taichi

AU - Terakura, Chieko

AU - Uji, Shinya

AU - Aoki, Haruyoshi

AU - Echizen, Yuji

AU - Takabatake, Toshiro

PY - 2003/5

Y1 - 2003/5

N2 - We report on the resistivity in CeNiSn at temperatures down to 0.035 K and in magnetic fields up to 20 T. The resistivity as a function of temperature T exhibits T2 dependence with a huge coefficient. Clear Shubnikov-de Haas (SdH) oscillations are observed for the two samples where the electrical current is applied along the b-axis, while possible traces of SdH oscillations are noticed for the other two samples where the current is applied along the a and c axes, respectively.

AB - We report on the resistivity in CeNiSn at temperatures down to 0.035 K and in magnetic fields up to 20 T. The resistivity as a function of temperature T exhibits T2 dependence with a huge coefficient. Clear Shubnikov-de Haas (SdH) oscillations are observed for the two samples where the electrical current is applied along the b-axis, while possible traces of SdH oscillations are noticed for the other two samples where the current is applied along the a and c axes, respectively.

KW - CeNiSn

KW - Fermi surface

KW - Kondo semiconductors

KW - Shubnikov-de Haas oscillations

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DO - 10.1016/S0921-4526(02)02377-3

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EP - 536

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

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