Low etching resistance and roughness formation of ArF photoresist during plasma etching are serious problems. We have previously found that decisive factors affecting the plasma resistance and roughness formation in an ArF photoresist are determined by ultraviolet/vacuum ultraviolet radiation and roughness formation is dominated by chemical reactions. In this paper, on the basis of our previous findings on the interaction between radiation species from plasma and ArF photoresist polymers, we investigated the polymer structural dependence for the degradation mechanism of ArF photoresist in the plasma etching processes. The etching resistance of ArF photoresist was improved by controlling the elemental ratio of oxygen atoms and ring structures in photoresist polymer. Furthermore, lactone C=O bond is found to be a key factor for roughness formation during the etching process. We have revealed the importance of the molecular structure of ArF photoresist for improving the surface roughness and etching resistance during the plasma etching process.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films