The effect of ZrSi2 and SiC doping on the microstructure and Jc-B properties of PIT processed MgB2 tapes

Yanwei Ma, Xianping Zhang, Aixia Xu, Xiaohang Li, Liye Xiao, G. Nishijima, S. Awaji, K. Watanabe, Yulei Jiao, Ling Xiao, Xuedong Bai, Kehui Wu, Haihu Wen

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Abstract

We investigated the effect of ZrSi2 and SiC doping on the microstructure, critical current density Jc and flux pinning of Fe-sheathed MgB2 tapes prepared by the in situ powder-in-tube method. Heat treatment was performed at a low temperature of 650 °C for 1 h. The phases, microstructures and flux pinning were characterized by means of x-ray diffraction, scanning electron microscope, magnetic and transport property measurements. It was found that the tapes doped with nanoscale SiC had the best pinning performance, while the ZrSi2 powder showed a similar improved field dependence of Jc compared with undoped samples. Jc values for the SiC doped samples were enhanced by two orders of magnitude at 4.2 K in magnetic fields above 8 T. At 4.2 K and 10 T, the Jc reached ∼1.5 × 104 A cm-2. Moreover, the critical temperature for the doped tapes decreased slightly (<1.2 K). Microstructural analysis shows that very good grain connections or/and grain refinement were obtained for the doped tapes. The mechanism of the enhancement of the flux pinning is also discussed.

Original languageEnglish
Pages (from-to)133-137
Number of pages5
JournalSuperconductor Science and Technology
Volume19
Issue number1
DOIs
Publication statusPublished - 2006 Jan 1

ASJC Scopus subject areas

  • Ceramics and Composites
  • Condensed Matter Physics
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Ma, Y., Zhang, X., Xu, A., Li, X., Xiao, L., Nishijima, G., Awaji, S., Watanabe, K., Jiao, Y., Xiao, L., Bai, X., Wu, K., & Wen, H. (2006). The effect of ZrSi2 and SiC doping on the microstructure and Jc-B properties of PIT processed MgB2 tapes. Superconductor Science and Technology, 19(1), 133-137. https://doi.org/10.1088/0953-2048/19/1/022