The effect of Y 2O 3 buffer layer for La 2O 3 gate dielectric film

Kentaro Nakagawa, Kunihiro Miyauchi, Kuniyuki Kakushima, Takeo Hattori, Kazuo Tsutsui, Hiroshi Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

La 2O 2, Y 2O 3 and La 2O 3/Y 2O 3 stack dielectric films were deposited on silicon by electron-beam evaporation. Chemical and electrical analyses of the interfacial growths of these films with silicon after heat treatment are performed comparatively. X-ray photoelectron spectroscopy (XPS) analysis reveals that Y 2O 3 layer suppresses the formation of SiO 2 at the interface. The Y 2O 3 layer also reduces the hysteresis in capacitance-voltage characteristics and leakage current without changing the equivalent oxide thickness (EOT).

Original languageEnglish
Title of host publicationProceedings of ESSDERC 2005
Subtitle of host publication35th European Solid-State Device Research Conference
Pages387-390
Number of pages4
DOIs
Publication statusPublished - 2005
Externally publishedYes
EventESSDERC 2005: 35th European Solid-State Device Research Conference - Grenoble, France
Duration: 2005 Sep 122005 Sep 16

Publication series

NameProceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference
Volume2005

Conference

ConferenceESSDERC 2005: 35th European Solid-State Device Research Conference
CountryFrance
CityGrenoble
Period05/9/1205/9/16

ASJC Scopus subject areas

  • Engineering(all)

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