TY - GEN
T1 - The effect of Y 2O 3 buffer layer for La 2O 3 gate dielectric film
AU - Nakagawa, Kentaro
AU - Miyauchi, Kunihiro
AU - Kakushima, Kuniyuki
AU - Hattori, Takeo
AU - Tsutsui, Kazuo
AU - Iwai, Hiroshi
PY - 2005
Y1 - 2005
N2 - La 2O 2, Y 2O 3 and La 2O 3/Y 2O 3 stack dielectric films were deposited on silicon by electron-beam evaporation. Chemical and electrical analyses of the interfacial growths of these films with silicon after heat treatment are performed comparatively. X-ray photoelectron spectroscopy (XPS) analysis reveals that Y 2O 3 layer suppresses the formation of SiO 2 at the interface. The Y 2O 3 layer also reduces the hysteresis in capacitance-voltage characteristics and leakage current without changing the equivalent oxide thickness (EOT).
AB - La 2O 2, Y 2O 3 and La 2O 3/Y 2O 3 stack dielectric films were deposited on silicon by electron-beam evaporation. Chemical and electrical analyses of the interfacial growths of these films with silicon after heat treatment are performed comparatively. X-ray photoelectron spectroscopy (XPS) analysis reveals that Y 2O 3 layer suppresses the formation of SiO 2 at the interface. The Y 2O 3 layer also reduces the hysteresis in capacitance-voltage characteristics and leakage current without changing the equivalent oxide thickness (EOT).
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U2 - 10.1109/ESSDER.2005.1546666
DO - 10.1109/ESSDER.2005.1546666
M3 - Conference contribution
AN - SCOPUS:33751405358
SN - 0780392035
SN - 9780780392038
T3 - Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference
SP - 387
EP - 390
BT - Proceedings of ESSDERC 2005
T2 - ESSDERC 2005: 35th European Solid-State Device Research Conference
Y2 - 12 September 2005 through 16 September 2005
ER -