The effect of various dopants on thermoelectric properties of Bi2(Te0.9Se0.1)3 polycrystals

A. Nozue, Y. H. Park, Akira Kawasaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

In this study, mechanical alloying followed by pulse discharge sintering (MA-PDS) was employed to synthesize the bulk Bi2(Te0.9Se0.1)3 thermoelectric materials and then the compacts were spread by hot-pressing process. The additives we selected several metal iodide and bromide (AgBr, CuBr, CuBr2, AgI). All dopants increase the carrier concentration and power-factor. The excellent metal element of dopants were silver and copper. Moreover, the effect of spreading on the crystal orientation and thermoelectric performance of the compacts was investigated. The microstructural characterizations of the spread compacts by XRD and SEM indicated a high crystallographic orientation after spreading. Furthermore, power-factor and carrier mobility was increased by the high crystal orientation.

Original languageEnglish
Title of host publicationProceedings ICT 2003 - 22nd International Conference on Thermoelectrics
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages31-33
Number of pages3
ISBN (Electronic)078038301X
DOIs
Publication statusPublished - 2003 Jan 1
Event22nd International Conference on Thermoelectrics, ICT 2003 - La Grande Motte, France
Duration: 2003 Aug 172003 Aug 21

Publication series

NameInternational Conference on Thermoelectrics, ICT, Proceedings
Volume2003-January

Other

Other22nd International Conference on Thermoelectrics, ICT 2003
CountryFrance
CityLa Grande Motte
Period03/8/1703/8/21

Keywords

  • Additives
  • Alloying
  • Bismuth
  • Copper
  • Crystal microstructure
  • Crystallography
  • Silver
  • Tellurium
  • Thermoelectricity
  • X-ray scattering

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • Cite this

    Nozue, A., Park, Y. H., & Kawasaki, A. (2003). The effect of various dopants on thermoelectric properties of Bi2(Te0.9Se0.1)3 polycrystals. In Proceedings ICT 2003 - 22nd International Conference on Thermoelectrics (pp. 31-33). [1287442] (International Conference on Thermoelectrics, ICT, Proceedings; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICT.2003.1287442