The effect of upper barrier layer growth on self-assembled CdSe quantum dots

Y. Murase, K. Maehashi, T. Hanada, Y. Hirotsu, H. Nakashima

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have investigated the effect of upper barrier layer growth on self-assembled CdSe quantum dots (QDs) by transmission electron microscope (TEM) and atomic force microscope (AFM). The AFM image of CdSe surfaces reveals a lot of isolated CdSe dots and non-uniform two-dimensional CdSe islands. The alloying layer is observed by cross-sectional TEM image. This alloying is explained by the diffusion of CdSe when ZnSe cap layer is grown on CdSe surfaces. Photoluminescence excitation spectra of self-assembled CdSe QDs reveal the existence of a non-uniform CdZnSe quantum well and CdSe QDs with CdZnSe alloy region. This result is in good agreement with the results of TEM and AFM observations.

Original languageEnglish
Pages (from-to)457-461
Number of pages5
JournalPhysica Status Solidi (B) Basic Research
Volume229
Issue number1
DOIs
Publication statusPublished - 2002 Aug 29
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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