Abstract
We have investigated the effect of upper barrier layer growth on self-assembled CdSe quantum dots (QDs) by transmission electron microscope (TEM) and atomic force microscope (AFM). The AFM image of CdSe surfaces reveals a lot of isolated CdSe dots and non-uniform two-dimensional CdSe islands. The alloying layer is observed by cross-sectional TEM image. This alloying is explained by the diffusion of CdSe when ZnSe cap layer is grown on CdSe surfaces. Photoluminescence excitation spectra of self-assembled CdSe QDs reveal the existence of a non-uniform CdZnSe quantum well and CdSe QDs with CdZnSe alloy region. This result is in good agreement with the results of TEM and AFM observations.
Original language | English |
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Pages (from-to) | 457-461 |
Number of pages | 5 |
Journal | Physica Status Solidi (B) Basic Research |
Volume | 229 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2002 Aug 29 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics