The effect of upper barrier layer growth on self-assembled CdSe quantum dots

Y. Murase; K. Maehashi; T. Hanada; Y. Hirotsu; H. Nakashima

doi:10.1002/1521-3951(200201)229:1<457::AID-PSSB457>3.0.CO;2-8

The effect of upper barrier layer growth on self-assembled CdSe quantum dots

Y. Murase, K. Maehashi, T. Hanada, Y. Hirotsu, H. Nakashima

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We have investigated the effect of upper barrier layer growth on self-assembled CdSe quantum dots (QDs) by transmission electron microscope (TEM) and atomic force microscope (AFM). The AFM image of CdSe surfaces reveals a lot of isolated CdSe dots and non-uniform two-dimensional CdSe islands. The alloying layer is observed by cross-sectional TEM image. This alloying is explained by the diffusion of CdSe when ZnSe cap layer is grown on CdSe surfaces. Photoluminescence excitation spectra of self-assembled CdSe QDs reveal the existence of a non-uniform CdZnSe quantum well and CdSe QDs with CdZnSe alloy region. This result is in good agreement with the results of TEM and AFM observations.

Original language	English
Pages (from-to)	457-461
Number of pages	5
Journal	Physica Status Solidi (B) Basic Research
Volume	229
Issue number	1
DOIs	https://doi.org/10.1002/1521-3951(200201)229:1<457::AID-PSSB457>3.0.CO;2-8
Publication status	Published - 2002 Aug 29
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/1521-3951(200201)229:1<457::AID-PSSB457>3.0.CO;2-8

Cite this

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abstract = "We have investigated the effect of upper barrier layer growth on self-assembled CdSe quantum dots (QDs) by transmission electron microscope (TEM) and atomic force microscope (AFM). The AFM image of CdSe surfaces reveals a lot of isolated CdSe dots and non-uniform two-dimensional CdSe islands. The alloying layer is observed by cross-sectional TEM image. This alloying is explained by the diffusion of CdSe when ZnSe cap layer is grown on CdSe surfaces. Photoluminescence excitation spectra of self-assembled CdSe QDs reveal the existence of a non-uniform CdZnSe quantum well and CdSe QDs with CdZnSe alloy region. This result is in good agreement with the results of TEM and AFM observations.",

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AU - Murase, Y.

AU - Maehashi, K.

AU - Hanada, T.

AU - Hirotsu, Y.

AU - Nakashima, H.

PY - 2002/8/29

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AB - We have investigated the effect of upper barrier layer growth on self-assembled CdSe quantum dots (QDs) by transmission electron microscope (TEM) and atomic force microscope (AFM). The AFM image of CdSe surfaces reveals a lot of isolated CdSe dots and non-uniform two-dimensional CdSe islands. The alloying layer is observed by cross-sectional TEM image. This alloying is explained by the diffusion of CdSe when ZnSe cap layer is grown on CdSe surfaces. Photoluminescence excitation spectra of self-assembled CdSe QDs reveal the existence of a non-uniform CdZnSe quantum well and CdSe QDs with CdZnSe alloy region. This result is in good agreement with the results of TEM and AFM observations.

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The effect of upper barrier layer growth on self-assembled CdSe quantum dots

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