Abstract
We have investigated the effect of upper barrier layer growth on self-assembled CdSe quantum dots (QDs) by transmission electron microscope (TEM) and atomic force microscope (AFM). The AFM image of CdSe surfaces reveals a lot of isolated CdSe dots and non-uniform two-dimensional CdSe islands. The alloying layer is observed by cross-sectional TEM image. This alloying is explained by the diffusion of CdSe when ZnSe cap layer is grown on CdSe surfaces. Photoluminescence excitation spectra of self-assembled CdSe QDs reveal the existence of a non-uniform CdZnSe quantum well and CdSe QDs with CdZnSe alloy region. This result is in good agreement with the results of TEM and AFM observations.
| Original language | English |
|---|---|
| Pages (from-to) | 457-461 |
| Number of pages | 5 |
| Journal | Physica Status Solidi (B) Basic Research |
| Volume | 229 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2002 Aug 29 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Murase, Y., Maehashi, K., Hanada, T., Hirotsu, Y., & Nakashima, H. (2002). The effect of upper barrier layer growth on self-assembled CdSe quantum dots. Physica Status Solidi (B) Basic Research, 229(1), 457-461. https://doi.org/10.1002/1521-3951(200201)229:1<457::AID-PSSB457>3.0.CO;2-8