The Effect of Tungsten Volume on Residual Stress and Cell Characteristics in MONOS

Young Taek Oh, Jae Min Sim, Hisashi Kino, Deok Kee Kim, Tetsu Tanaka, Yun Heub Song

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


The effect of residual stress during the tungsten deposition process were investigated using metal-oxide-nitride-oxide-semiconductor (MONOS) devices. The variation of residual stress due to tungsten volume was measured under tensile and compressive stress conditions. Residual stress increased in proportion to the deposition volume. Stress influenced the Si/SiO2 interface and caused deterioration of the electrical properties, which was experimentally observed during measurements of the interface trap densities and memory windows. We confirmed that residual stress led to degradation of the cell characteristics of MONOS devices, and the absolute value of stress significantly affected these issues regardless of the polarity. From our experiments results, we can predict the degradation of cell characteristics in memory devices, and confirm the need for appropriate stress control in manufacturing process.

Original languageEnglish
Article number8651629
Pages (from-to)382-387
Number of pages6
JournalIEEE Journal of the Electron Devices Society
Publication statusPublished - 2019


  • MONOS structure
  • Residual stress
  • curvature method
  • interface trap densities
  • tungsten volume

ASJC Scopus subject areas

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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