The effect of thin gap insertion layer on InP nanostructure grown by metal-organic vapour phase epitaxys

Soe Soe Han, Somsak Panyakeow, Somchai Ratanathammaphan, Akio Higo, Wang Yunpeng, Momoko Deura, Masakasu Sugiyama, Yoshiaki Nakano

Research output: Contribution to journalArticlepeer-review

Abstract

The effect of thin GaP insertion layers on the structural and optical properties of InP/In 0.49Ga 0.51P self-assembled quantum dots (SAQDs) on GaAs (001) substrate grown by metal-organic vapour phase epitaxy has been reported. The properties of InP/In 0.49Ga 0.51P SAQDs are modified when a thin (1-4 ML) GaP layer is inserted underneath the InP quantum dots (QDs). Deposition of the GaP insertion layer affects the dot dimension and improves the size uniformity. The density, dimension and uniformity of InP QDs strongly depend on the GaP insertion layer thickness. This variation in QD size is a result of a material nucleation effect caused by atomic intermixing between the InP QDs and underlying GaP insertion layer and surface energy. The insertion of GaP layer led to tuning the emission wavelength and narrowing of full width at half maximum (FWHM) when they are characterised by PL measurements at room temperature.

Original languageEnglish
Pages (from-to)915-918
Number of pages4
JournalCanadian Journal of Chemical Engineering
Volume90
Issue number4
DOIs
Publication statusPublished - 2012 Aug 1

Keywords

  • Atomic force microscope (AFM)
  • InP
  • Metal-organic vapour phase epitaxy (MOVPE)
  • Photoluminescence (PL)
  • Self-assembled quantum dots (SAQDs)

ASJC Scopus subject areas

  • Chemical Engineering(all)

Fingerprint

Dive into the research topics of 'The effect of thin gap insertion layer on InP nanostructure grown by metal-organic vapour phase epitaxys'. Together they form a unique fingerprint.

Cite this