The effect of remote Coulomb scattering on electron mobility in La 2O 3gate stacked MOSFETs

M. Mamatrishat, M. Kouda, T. Kawanago, K. Kakushima, P. Ahmet, K. Tsutsui, Y. Kataoka, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The effect of remote Coulomb scattering on electron mobility in W/La 2O 3/Si gate stacked metal-oxide-semiconductor field-effect transistors (MOSFETs) was studied. Experimental results show that scattering caused by the Coulomb charges located near the W/La 2O 3interface becomes a dominant factor for the mobility of MOSFETs with an equivalent oxide thickness (EOT) of 1 nm or less.

Original languageEnglish
Article number045014
JournalSemiconductor Science and Technology
Volume27
Issue number4
DOIs
Publication statusPublished - 2012 Apr 4
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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