The effect of remote Coulomb scattering on electron mobility in W/La 2O 3/Si gate stacked metal-oxide-semiconductor field-effect transistors (MOSFETs) was studied. Experimental results show that scattering caused by the Coulomb charges located near the W/La 2O 3interface becomes a dominant factor for the mobility of MOSFETs with an equivalent oxide thickness (EOT) of 1 nm or less.
|Journal||Semiconductor Science and Technology|
|Publication status||Published - 2012 Apr 4|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry