The effect of remote Coulomb scattering on electron mobility in La 2O 3gate stacked MOSFETs

M. Mamatrishat; M. Kouda; T. Kawanago; K. Kakushima; P. Ahmet; K. Tsutsui; Y. Kataoka; A. Nishiyama; N. Sugii; K. Natori; T. Hattori; H. Iwai

doi:10.1088/0268-1242/27/4/045014

The effect of remote Coulomb scattering on electron mobility in La ₂O ₃gate stacked MOSFETs

M. Mamatrishat, M. Kouda, T. Kawanago, K. Kakushima, P. Ahmet, K. Tsutsui, Y. Kataoka, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The effect of remote Coulomb scattering on electron mobility in W/La ₂O ₃/Si gate stacked metal-oxide-semiconductor field-effect transistors (MOSFETs) was studied. Experimental results show that scattering caused by the Coulomb charges located near the W/La ₂O ₃interface becomes a dominant factor for the mobility of MOSFETs with an equivalent oxide thickness (EOT) of 1 nm or less.

Original language	English
Article number	045014
Journal	Semiconductor Science and Technology
Volume	27
Issue number	4
DOIs	https://doi.org/10.1088/0268-1242/27/4/045014
Publication status	Published - 2012 Apr 4
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/27/4/045014

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title = "The effect of remote Coulomb scattering on electron mobility in La 2O 3gate stacked MOSFETs",

abstract = "The effect of remote Coulomb scattering on electron mobility in W/La 2O 3/Si gate stacked metal-oxide-semiconductor field-effect transistors (MOSFETs) was studied. Experimental results show that scattering caused by the Coulomb charges located near the W/La 2O 3interface becomes a dominant factor for the mobility of MOSFETs with an equivalent oxide thickness (EOT) of 1 nm or less.",

author = "M. Mamatrishat and M. Kouda and T. Kawanago and K. Kakushima and P. Ahmet and K. Tsutsui and Y. Kataoka and A. Nishiyama and N. Sugii and K. Natori and T. Hattori and H. Iwai",

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T1 - The effect of remote Coulomb scattering on electron mobility in La 2O 3gate stacked MOSFETs

AU - Mamatrishat, M.

AU - Kouda, M.

AU - Kawanago, T.

AU - Kakushima, K.

AU - Ahmet, P.

AU - Tsutsui, K.

AU - Kataoka, Y.

AU - Nishiyama, A.

AU - Sugii, N.

AU - Natori, K.

AU - Hattori, T.

AU - Iwai, H.

PY - 2012/4/4

Y1 - 2012/4/4

N2 - The effect of remote Coulomb scattering on electron mobility in W/La 2O 3/Si gate stacked metal-oxide-semiconductor field-effect transistors (MOSFETs) was studied. Experimental results show that scattering caused by the Coulomb charges located near the W/La 2O 3interface becomes a dominant factor for the mobility of MOSFETs with an equivalent oxide thickness (EOT) of 1 nm or less.

AB - The effect of remote Coulomb scattering on electron mobility in W/La 2O 3/Si gate stacked metal-oxide-semiconductor field-effect transistors (MOSFETs) was studied. Experimental results show that scattering caused by the Coulomb charges located near the W/La 2O 3interface becomes a dominant factor for the mobility of MOSFETs with an equivalent oxide thickness (EOT) of 1 nm or less.

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DO - 10.1088/0268-1242/27/4/045014

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SN - 0268-1242

VL - 27

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 4

M1 - 045014

ER -

The effect of remote Coulomb scattering on electron mobility in La ₂O ₃gate stacked MOSFETs

Abstract

ASJC Scopus subject areas

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