Abstract
To study the effect of nonstoichiometry and polarity of the (111) plane on recrystallization of an implantation-induced amorphous layer, arsenic-implanted (100) and (111) A and B GaAs wafers were annealed under vacuum and specified arsenic vapor pressures. It has been found that the formation of microtwins is suppressed by annealing at the specified arsenic pressure. This suggests that microtwin formation is closely related to the arsenic deficiency or arsenic vacancies. Moreover, the result of direct implantation into (111) A (Ga) and B (As) surfaces indicates that the twins would preferentially grow on the (111) A plane, which has a smaller solid-phase regrowth rate than that of the (111) B plane.
| Original language | English |
|---|---|
| Pages (from-to) | 1136-1139 |
| Number of pages | 4 |
| Journal | Journal of Applied Physics |
| Volume | 64 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1988 Dec 1 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)