The Effect of Mechanical Stress on Cell Characteristics in MONOS Structures

Young Taek Oh, Il Pyo Roh, Hisashi Kino, Tetsu Tanaka, Yun Heub Song

Research output: Contribution to journalArticle

Abstract

We investigated the impact of mechanical stress on the cell characteristics of metal-oxide-nitride-oxide-semiconductor (MONOS) structures through experimental observations based on a curvature method for residual stress extraction and an analysis of the interface state. Residual stress induced on a substrate was observed to change from compressive to tensile depending on the tungsten process conditions; a high interface trap density was extracted under a high compressive stress environment based on a silicon bonding model. These interface trap densities were suggested as being attributable to a critical factor weakening the leakage characteristics of the MONOS structure. Besides, interface traps interrupted electron tunneling due to unintended charge trapping at the interface, which deteriorated memory characteristics indicated by a reduction in trap density. These results experimentally supported the effects of mechanical stress on device characteristics and reliability, which could be a straightforward way toward understanding the impact of stress for improved future flash memory applications.

Original languageEnglish
Article number8447253
Pages (from-to)4313-4319
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume65
Issue number10
DOIs
Publication statusPublished - 2018 Oct

Keywords

  • Curvature method
  • interface trap densities
  • mechanical stress
  • metal-oxide-nitride-oxide-semiconductor (MONOS) structure
  • residual stress

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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