The effect of isotropic and anisotropic scattering in drain region of ballistic channel diode

A. Abudukelimu, K. Kakushima, P. Ahmet, M. Genic, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

The effect of isotropic and anisotropic scattering within the drain region of diode with ballistic channel is investigated using the semiclassical Monte Carlo simulation, and the results are discussed. The results show that the isotropic scattering can severely degrade the steady-state current, the electrons mean velocity, and increase the electrons concentration in channel because some hot electrons can back into the channel from drain, and even return to the source. On the contrary, anisotropic scattering can suppresses the backward flow of hot electrons. We conclude that the isotropic scattering in the drain region seriously influences the carrier transport relative to anisotropic scattering.

Original languageEnglish
Title of host publicationICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages1247-1249
Number of pages3
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: 2010 Nov 12010 Nov 4

Publication series

NameICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

Other2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period10/11/110/11/4

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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