The effect of inserting thin Co2MnAl layer into the Co 2MnSi/MgO interface on tunnel magnetoresistance effect

E. Ozawa, S. Tsunegi, M. Oogane, H. Naganuma, Y. Ando

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10 Citations (Scopus)

Abstract

We fabricated an epitaxially grown B2-ordered Co2MnAl Heusler alloy film by optimizing fabrication conditions, such as composition of the films and annealing temperature. Tunnel magnetoresistance (TMR) effect was investigated in Co2MnSi/Co2MnAl(0-1.0 nm)/MgO/CoFe magnetic tunnel junctions (MTJs). TMR ratio was enhanced by inserting a thin Co2MnAl layer at the Co2MnSi/MgO interface. The MTJ with Co2MnAl thickness of 0.5 nm exhibited the highest TMR ratio at 310 K and 10 K.

Original languageEnglish
Article number012104
JournalJournal of Physics: Conference Series
Volume266
Issue number1
DOIs
Publication statusPublished - 2011

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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