We fabricated an epitaxially grown B2-ordered Co2MnAl Heusler alloy film by optimizing fabrication conditions, such as composition of the films and annealing temperature. Tunnel magnetoresistance (TMR) effect was investigated in Co2MnSi/Co2MnAl(0-1.0 nm)/MgO/CoFe magnetic tunnel junctions (MTJs). TMR ratio was enhanced by inserting a thin Co2MnAl layer at the Co2MnSi/MgO interface. The MTJ with Co2MnAl thickness of 0.5 nm exhibited the highest TMR ratio at 310 K and 10 K.
ASJC Scopus subject areas
- Physics and Astronomy(all)