The effect of hydrogen irradiation and annealing on the low-temperature growth of homoepitaxial ZnO layers grown on (0 0 0 1) ZnO substrates by plasma-assisted molecular beam epitaxy

S. H. Park, H. Suzuki, J. H. Chang, T. Minegishi, J. S. Park, I. H. Im, G. Fujimoto, T. Hanada, D. C. Oh, M. W. Cho, T. Yao

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3 Citations (Scopus)

Abstract

Low-temperature growth of high quality homoepitaxial ZnO is realized by using hydrogen irradiation and annealing processes (modified method). By modified method, two-dimensional growth and atomically smooth surface with steps (terrace length ∼75 nm) are achieved at 400 °C. Furthermore, FWHMs of high resolution X-ray rocking curves for (0 0 0 2) and (10-11) reflections are evaluated as narrow as 21 arcsec, which indicates that high crystallinity of the ZnO grown at 400 °C by modified method is almost similar to that grown at 600 °C by conventional method. Photoluminescence results show the considerable improvement of optical properties, such as an emersion of free exciton (FX) and a decrease of donor bound exciton (D°X) linewidth, by using modified method, even at growth temperature as low as 400 °C.

Original languageEnglish
Pages (from-to)3120-3124
Number of pages5
JournalApplied Surface Science
Volume254
Issue number10
DOIs
Publication statusPublished - 2008 Mar 15

Keywords

  • Hydrogen
  • Low-temperature growth
  • Surfactant

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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