The effect of growth atmosphere and Ir contamination on electric properties of La3Ta0.5Ga5.5O14 single crystal grown by the floating zone and Czochralski method

Hiromitsu Kimura; Satoshi Uda; Oleg Buzanov; Xinming Huang; Shinji Koh

doi:10.1007/s10832-007-9349-2

The effect of growth atmosphere and Ir contamination on electric properties of La₃Ta_0.5Ga_5.5O₁₄ single crystal grown by the floating zone and Czochralski method

Hiromitsu Kimura, Satoshi Uda, Oleg Buzanov, Xinming Huang, Shinji Koh

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

The influence of growth atmosphere and Ir contamination on electrical resistivity of langatate (La₃Ta_0.5Ga_5.5O ₁₄; LTG) was studied. LTG single crystals were grown via the Czochralski method under different oxygen partial pressures with Ir contamination from the Ir crucible. In addition, LTG crystals were grown by the floating zone method and they were not contaminated by Ir. The electrical resistivity and ionic transport number of these crystals were measured in the temperature range 300-1000°C. The conduction mechanism of LTG changed at about 720°C. At T∈<∈720°C, electronic conduction was dominant, and the resistivity was affected by growth atmosphere as well as Ir contamination. In contrast, at T∈>∈720°C, ionic conduction was dominant, and the resistivity was affected only by Ir contamination. In both temperature regions, Ir contamination decreased the resistivity by an order of magnitude.

Original language	English
Pages (from-to)	73-80
Number of pages	8
Journal	Journal of Electroceramics
Volume	20
Issue number	2
DOIs	https://doi.org/10.1007/s10832-007-9349-2
Publication status	Published - 2008 Apr

Keywords

Defect
Electrical resistivity
High temperature
Langatate
Piezoelectric material

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Mechanics of Materials
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1007/s10832-007-9349-2

Cite this

@article{e8ff0b1ff2ea489a89d9a30ac1d895b0,

title = "The effect of growth atmosphere and Ir contamination on electric properties of La3Ta0.5Ga5.5O14 single crystal grown by the floating zone and Czochralski method",

abstract = "The influence of growth atmosphere and Ir contamination on electrical resistivity of langatate (La3Ta0.5Ga5.5O 14; LTG) was studied. LTG single crystals were grown via the Czochralski method under different oxygen partial pressures with Ir contamination from the Ir crucible. In addition, LTG crystals were grown by the floating zone method and they were not contaminated by Ir. The electrical resistivity and ionic transport number of these crystals were measured in the temperature range 300-1000°C. The conduction mechanism of LTG changed at about 720°C. At T∈<∈720°C, electronic conduction was dominant, and the resistivity was affected by growth atmosphere as well as Ir contamination. In contrast, at T∈>∈720°C, ionic conduction was dominant, and the resistivity was affected only by Ir contamination. In both temperature regions, Ir contamination decreased the resistivity by an order of magnitude.",

keywords = "Defect, Electrical resistivity, High temperature, Langatate, Piezoelectric material",

author = "Hiromitsu Kimura and Satoshi Uda and Oleg Buzanov and Xinming Huang and Shinji Koh",

note = "Funding Information: Acknowledgements This work was supported in part by Grants-in-Aid for Scientific Research (17360002) from the Ministry of Education, Science, Sports and Culture of Japan. We also would like to thank the Nano-Materials Project of IMR, Tohoku University, and Mitsubishi Foundation for their support.",

year = "2008",

month = apr,

doi = "10.1007/s10832-007-9349-2",

language = "English",

volume = "20",

pages = "73--80",

journal = "Journal of Electroceramics",

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T1 - The effect of growth atmosphere and Ir contamination on electric properties of La3Ta0.5Ga5.5O14 single crystal grown by the floating zone and Czochralski method

AU - Kimura, Hiromitsu

AU - Uda, Satoshi

AU - Buzanov, Oleg

AU - Huang, Xinming

AU - Koh, Shinji

N1 - Funding Information: Acknowledgements This work was supported in part by Grants-in-Aid for Scientific Research (17360002) from the Ministry of Education, Science, Sports and Culture of Japan. We also would like to thank the Nano-Materials Project of IMR, Tohoku University, and Mitsubishi Foundation for their support.

PY - 2008/4

Y1 - 2008/4

N2 - The influence of growth atmosphere and Ir contamination on electrical resistivity of langatate (La3Ta0.5Ga5.5O 14; LTG) was studied. LTG single crystals were grown via the Czochralski method under different oxygen partial pressures with Ir contamination from the Ir crucible. In addition, LTG crystals were grown by the floating zone method and they were not contaminated by Ir. The electrical resistivity and ionic transport number of these crystals were measured in the temperature range 300-1000°C. The conduction mechanism of LTG changed at about 720°C. At T∈<∈720°C, electronic conduction was dominant, and the resistivity was affected by growth atmosphere as well as Ir contamination. In contrast, at T∈>∈720°C, ionic conduction was dominant, and the resistivity was affected only by Ir contamination. In both temperature regions, Ir contamination decreased the resistivity by an order of magnitude.

AB - The influence of growth atmosphere and Ir contamination on electrical resistivity of langatate (La3Ta0.5Ga5.5O 14; LTG) was studied. LTG single crystals were grown via the Czochralski method under different oxygen partial pressures with Ir contamination from the Ir crucible. In addition, LTG crystals were grown by the floating zone method and they were not contaminated by Ir. The electrical resistivity and ionic transport number of these crystals were measured in the temperature range 300-1000°C. The conduction mechanism of LTG changed at about 720°C. At T∈<∈720°C, electronic conduction was dominant, and the resistivity was affected by growth atmosphere as well as Ir contamination. In contrast, at T∈>∈720°C, ionic conduction was dominant, and the resistivity was affected only by Ir contamination. In both temperature regions, Ir contamination decreased the resistivity by an order of magnitude.

KW - Defect

KW - Electrical resistivity

KW - High temperature

KW - Langatate

KW - Piezoelectric material

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