The effect of grain boundary characteristics on the morphology of the crystal/melt interface of multicrystalline silicon

Kozo Fujiwara; Masaya Ishii; Kensaku Maeda; Haruhiko Koizumi; Jun Nozawa; Satoshi Uda

doi:10.1016/j.scriptamat.2013.04.015

The effect of grain boundary characteristics on the morphology of the crystal/melt interface of multicrystalline silicon

Kozo Fujiwara, Masaya Ishii, Kensaku Maeda, Haruhiko Koizumi, Jun Nozawa, Satoshi Uda

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

The effect of grain boundary characteristics on the crystal/melt interface morphology during the unidirectional solidification of multicrystalline Si was studied by in situ observations. It was shown that sharp and smooth grooves were formed at the crystal/melt interfaces at Σ27 and random grain boundaries, whereas no grooves were formed at Σ3 {1 1 1} twin boundaries. We explain the reasons why the grooves form at grain boundaries and discuss the impurity segregation at the grain boundary grooves on the crystal/melt interface.

Original language	English
Pages (from-to)	266-269
Number of pages	4
Journal	Scripta Materialia
Volume	69
Issue number	3
DOIs	https://doi.org/10.1016/j.scriptamat.2013.04.015
Publication status	Published - 2013 Aug

Keywords

Crystal/melt interface
Grain boundary character
Impurity Segregation
Solidification

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys

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abstract = "The effect of grain boundary characteristics on the crystal/melt interface morphology during the unidirectional solidification of multicrystalline Si was studied by in situ observations. It was shown that sharp and smooth grooves were formed at the crystal/melt interfaces at Σ27 and random grain boundaries, whereas no grooves were formed at Σ3 {1 1 1} twin boundaries. We explain the reasons why the grooves form at grain boundaries and discuss the impurity segregation at the grain boundary grooves on the crystal/melt interface.",

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author = "Kozo Fujiwara and Masaya Ishii and Kensaku Maeda and Haruhiko Koizumi and Jun Nozawa and Satoshi Uda",

note = "Funding Information: This work was funded by the Cabinet Office, Government of Japan, through its Funding Program for Next Generation World-Leading Researchers. Copyright: Copyright 2013 Elsevier B.V., All rights reserved.",

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AU - Fujiwara, Kozo

AU - Ishii, Masaya

AU - Maeda, Kensaku

AU - Koizumi, Haruhiko

AU - Nozawa, Jun

AU - Uda, Satoshi

N1 - Funding Information: This work was funded by the Cabinet Office, Government of Japan, through its Funding Program for Next Generation World-Leading Researchers. Copyright: Copyright 2013 Elsevier B.V., All rights reserved.

PY - 2013/8

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N2 - The effect of grain boundary characteristics on the crystal/melt interface morphology during the unidirectional solidification of multicrystalline Si was studied by in situ observations. It was shown that sharp and smooth grooves were formed at the crystal/melt interfaces at Σ27 and random grain boundaries, whereas no grooves were formed at Σ3 {1 1 1} twin boundaries. We explain the reasons why the grooves form at grain boundaries and discuss the impurity segregation at the grain boundary grooves on the crystal/melt interface.

AB - The effect of grain boundary characteristics on the crystal/melt interface morphology during the unidirectional solidification of multicrystalline Si was studied by in situ observations. It was shown that sharp and smooth grooves were formed at the crystal/melt interfaces at Σ27 and random grain boundaries, whereas no grooves were formed at Σ3 {1 1 1} twin boundaries. We explain the reasons why the grooves form at grain boundaries and discuss the impurity segregation at the grain boundary grooves on the crystal/melt interface.

KW - Crystal/melt interface

KW - Grain boundary character

KW - Impurity Segregation

KW - Solidification

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The effect of grain boundary characteristics on the morphology of the crystal/melt interface of multicrystalline silicon

Abstract

Keywords

ASJC Scopus subject areas

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