Abstract
The effect of grain boundary characteristics on the crystal/melt interface morphology during the unidirectional solidification of multicrystalline Si was studied by in situ observations. It was shown that sharp and smooth grooves were formed at the crystal/melt interfaces at Σ27 and random grain boundaries, whereas no grooves were formed at Σ3 {1 1 1} twin boundaries. We explain the reasons why the grooves form at grain boundaries and discuss the impurity segregation at the grain boundary grooves on the crystal/melt interface.
Original language | English |
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Pages (from-to) | 266-269 |
Number of pages | 4 |
Journal | Scripta Materialia |
Volume | 69 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2013 Aug |
Keywords
- Crystal/melt interface
- Grain boundary character
- Impurity Segregation
- Solidification
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys